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Shallow-level defect passivation by 6H perovskite polytype for highly efficient and stable perovskite solar cells

Author

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  • Hobeom Kim

    (École Polytechnique Fédérale de Lausanne (EPFL)
    Gwangju Institute of Science and Technology (GIST))

  • So-Min Yoo

    (École Polytechnique Fédérale de Lausanne (EPFL)
    Korea Research Institute of Chemical Technology (KRICT))

  • Bin Ding

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Hiroyuki Kanda

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Naoyuki Shibayama

    (Toin University of Yokohama)

  • Maria A. Syzgantseva

    (Lomonosov Moscow State University
    Mendeleev University of Chemical Technology)

  • Farzaneh Fadaei Tirani

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Pascal Schouwink

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Hyung Joong Yun

    (Korea Basic Science Institute (KBSI))

  • Byoungchul Son

    (Korea Basic Science Institute (KBSI))

  • Yong Ding

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Beom-Soo Kim

    (Korea Research Institute of Chemical Technology (KRICT))

  • Young Yun Kim

    (Korea Research Institute of Chemical Technology (KRICT))

  • Junmo Park

    (Gwangju Institute of Science and Technology (GIST))

  • Olga A. Syzgantseva

    (Lomonosov Moscow State University)

  • Nam Joong Jeon

    (Korea Research Institute of Chemical Technology (KRICT))

  • Paul J. Dyson

    (École Polytechnique Fédérale de Lausanne (EPFL))

  • Mohammad K. Nazeeruddin

    (École Polytechnique Fédérale de Lausanne (EPFL)
    King Abdulaziz University)

Abstract

The power conversion efficiency of perovskite solar cells continues to increase. However, defects in perovskite materials are detrimental to their carrier dynamics and structural stability, ultimately limiting the photovoltaic characteristics and stability of perovskite solar cells. Herein, we report that 6H polytype perovskite effectively engineers defects at the interface with cubic polytype FAPbI3, which facilitates radiative recombination and improves the stability of the polycrystalline film. We particularly show the detrimental effects of shallow-level defect that originates from the formation of the most dominant iodide vacancy (VI+) in FAPbI3. Furthermore, additional surface passivation on top of the hetero-polytypic perovskite film results in an ultra-long carrier lifetime exceeding 18 μs, affords power conversion efficiencies of 24.13% for perovskite solar cells, 21.92% (certified power conversion efficiency: 21.44%) for a module, and long-term stability. The hetero-polytypic perovskite configuration may be considered as close to the ideal polycrystalline structure in terms of charge carrier dynamics and stability.

Suggested Citation

  • Hobeom Kim & So-Min Yoo & Bin Ding & Hiroyuki Kanda & Naoyuki Shibayama & Maria A. Syzgantseva & Farzaneh Fadaei Tirani & Pascal Schouwink & Hyung Joong Yun & Byoungchul Son & Yong Ding & Beom-Soo Kim, 2024. "Shallow-level defect passivation by 6H perovskite polytype for highly efficient and stable perovskite solar cells," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-50016-6
    DOI: 10.1038/s41467-024-50016-6
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