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Electrically reversible cracks in an intermetallic film controlled by an electric field

Author

Listed:
  • Z. Q. Liu

    (Beihang University)

  • J. H. Liu

    (Beihang University)

  • M. D. Biegalski

    (Oak Ridge National Laboratory)

  • J.-M. Hu

    (The Pennsylvania State University)

  • S. L. Shang

    (The Pennsylvania State University)

  • Y. Ji

    (The Pennsylvania State University)

  • J. M. Wang

    (Beihang University)

  • S. L. Hsu

    (University of California)

  • A. T. Wong

    (Oak Ridge National Laboratory)

  • M. J. Cordill

    (Montanuniversität Leoben)

  • B. Gludovatz

    (UNSW Sydney)

  • C. Marker

    (The Pennsylvania State University)

  • H. Yan

    (Beihang University)

  • Z. X. Feng

    (Beihang University)

  • L. You

    (Huazhong University of Science and Technology)

  • M. W. Lin

    (Oak Ridge National Laboratory)

  • T. Z. Ward

    (Oak Ridge National Laboratory)

  • Z. K. Liu

    (The Pennsylvania State University)

  • C. B. Jiang

    (Beihang University)

  • L. Q. Chen

    (The Pennsylvania State University)

  • R. O. Ritchie

    (University of California
    Lawrence Berkeley National Laboratory)

  • H. M. Christen

    (Oak Ridge National Laboratory)

  • R. Ramesh

    (University of California
    Lawrence Berkeley National Laboratory
    University of California)

Abstract

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

Suggested Citation

  • Z. Q. Liu & J. H. Liu & M. D. Biegalski & J.-M. Hu & S. L. Shang & Y. Ji & J. M. Wang & S. L. Hsu & A. T. Wong & M. J. Cordill & B. Gludovatz & C. Marker & H. Yan & Z. X. Feng & L. You & M. W. Lin & T, 2018. "Electrically reversible cracks in an intermetallic film controlled by an electric field," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-017-02454-8
    DOI: 10.1038/s41467-017-02454-8
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    Cited by:

    1. Han Yan & Hongye Mao & Peixin Qin & Jinhua Wang & Haidong Liang & Xiaorong Zhou & Xiaoning Wang & Hongyu Chen & Ziang Meng & Li Liu & Guojian Zhao & Zhiyuan Duan & Zengwei Zhu & Bin Fang & Zhongming Z, 2024. "An antiferromagnetic spin phase change memory," Nature Communications, Nature, vol. 15(1), pages 1-8, December.

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