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Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches

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  • Minguk Jo

    (Pohang University of Science and Technology (POSTECH))

  • Ye-Won Seo

    (Pohang University of Science and Technology (POSTECH))

  • Hyojin Yoon

    (Pohang University of Science and Technology (POSTECH)
    University of Minnesota)

  • Yeon-Seo Nam

    (Pohang University of Science and Technology (POSTECH))

  • Si-Young Choi

    (Pohang University of Science and Technology (POSTECH))

  • Byung Joon Choi

    (Department of Materials Science and Engineering (MSE), Seoul National University of Science and Technology (Seoultech))

  • Junwoo Son

    (Pohang University of Science and Technology (POSTECH))

Abstract

Mott threshold switching, which is observed in quantum materials featuring an electrically fired insulator-to-metal transition, calls for delicate control of the percolative dynamics of electrically switchable domains on a nanoscale. Here, we demonstrate that embedded metallic nanoparticles (NP) dramatically promote metastability of switchable metallic domains in single-crystal-like VO2 Mott switches. Using a model system of Pt-NP-VO2 single-crystal-like films, interestingly, the embedded Pt NPs provide 33.3 times longer ‘memory’ of previous threshold metallic conduction by serving as pre-formed ‘stepping-stones’ in the switchable VO2 matrix by consecutive electical pulse measurement; persistent memory of previous firing during the application of sub-threshold pulses was achieved on a six orders of magnitude longer timescale than the single-pulse recovery time of the insulating resistance in Pt-NP-VO2 Mott switches. This discovery offers a fundamental strategy to exploit the geometric evolution of switchable domains in electrically fired transition and potential applications for non-Boolean computing using quantum materials.

Suggested Citation

  • Minguk Jo & Ye-Won Seo & Hyojin Yoon & Yeon-Seo Nam & Si-Young Choi & Byung Joon Choi & Junwoo Son, 2022. "Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-32081-x
    DOI: 10.1038/s41467-022-32081-x
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    References listed on IDEAS

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    1. Yunkyu Park & Hyeji Sim & Minguk Jo & Gi-Yeop Kim & Daseob Yoon & Hyeon Han & Younghak Kim & Kyung Song & Donghwa Lee & Si-Young Choi & Junwoo Son, 2020. "Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
    2. Nikhil Shukla & Arun V. Thathachary & Ashish Agrawal & Hanjong Paik & Ahmedullah Aziz & Darrell G. Schlom & Sumeet Kumar Gupta & Roman Engel-Herbert & Suman Datta, 2015. "A steep-slope transistor based on abrupt electronic phase transition," Nature Communications, Nature, vol. 6(1), pages 1-6, November.
    3. Yeonbae Lee & Z. Q. Liu & J. T. Heron & J. D. Clarkson & J. Hong & C. Ko & M. D. Biegalski & U. Aschauer & S. L. Hsu & M. E. Nowakowski & J. Wu & H. M. Christen & S. Salahuddin & J. B. Bokor & N. A. S, 2015. "Large resistivity modulation in mixed-phase metallic systems," Nature Communications, Nature, vol. 6(1), pages 1-7, May.
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