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Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics

Author

Listed:
  • Chuqiao Shi

    (Rice University)

  • Nannan Mao

    (Massachusetts Institute of Technology
    Massachusetts Institute of Technology)

  • Kena Zhang

    (University of Texas at Arlington)

  • Tianyi Zhang

    (Massachusetts Institute of Technology)

  • Ming-Hui Chiu

    (Massachusetts Institute of Technology)

  • Kenna Ashen

    (Texas A&M University)

  • Bo Wang

    (The Pennsylvania State University)

  • Xiuyu Tang

    (Texas A&M University)

  • Galio Guo

    (Rice University)

  • Shiming Lei

    (Rice University)

  • Longqing Chen

    (The Pennsylvania State University)

  • Ye Cao

    (University of Texas at Arlington)

  • Xiaofeng Qian

    (Texas A&M University
    Texas A&M University
    Texas A&M University)

  • Jing Kong

    (Massachusetts Institute of Technology)

  • Yimo Han

    (Rice University)

Abstract

Van der Waals (vdW) ferroelectrics have attracted significant attention for their potential in next-generation nano-electronics. Two-dimensional (2D) group-IV monochalcogenides have emerged as a promising candidate due to their strong room temperature in-plane polarization down to a monolayer limit. However, their polarization is strongly coupled with the lattice strain and stacking orders, which impact their electronic properties. Here, we utilize four-dimensional scanning transmission electron microscopy (4D-STEM) to simultaneously probe the in-plane strain and out-of-plane stacking in vdW SnSe. Specifically, we observe large lattice strain up to 4% with a gradient across ~50 nm to compensate lattice mismatch at domain walls, mitigating defects initiation. Additionally, we discover the unusual ferroelectric-to-antiferroelectric domain walls stabilized by vdW force and may lead to anisotropic nonlinear optical responses. Our findings provide a comprehensive understanding of in-plane and out-of-plane structures affecting domain properties in vdW SnSe, laying the foundation for domain wall engineering in vdW ferroelectrics.

Suggested Citation

  • Chuqiao Shi & Nannan Mao & Kena Zhang & Tianyi Zhang & Ming-Hui Chiu & Kenna Ashen & Bo Wang & Xiuyu Tang & Galio Guo & Shiming Lei & Longqing Chen & Ye Cao & Xiaofeng Qian & Jing Kong & Yimo Han, 2023. "Domain-dependent strain and stacking in two-dimensional van der Waals ferroelectrics," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-42947-3
    DOI: 10.1038/s41467-023-42947-3
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    References listed on IDEAS

    as
    1. Fengrui Sui & Min Jin & Yuanyuan Zhang & Ruijuan Qi & Yu-Ning Wu & Rong Huang & Fangyu Yue & Junhao Chu, 2023. "Sliding ferroelectricity in van der Waals layered γ-InSe semiconductor," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
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