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Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface

Author

Listed:
  • Xuexi Yan

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Yixiao Jiang

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Qianqian Jin

    (Guangxi University of Science and Technology)

  • Tingting Yao

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Weizhen Wang

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Ang Tao

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Chunyang Gao

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Xiang Li

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China)

  • Chunlin Chen

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
    Ji Hua Laboratory)

  • Hengqiang Ye

    (Ji Hua Laboratory)

  • Xiu-Liang Ma

    (Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of China
    Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory
    Institute of Physics, Chinese Academy of Sciences)

Abstract

Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.

Suggested Citation

  • Xuexi Yan & Yixiao Jiang & Qianqian Jin & Tingting Yao & Weizhen Wang & Ang Tao & Chunyang Gao & Xiang Li & Chunlin Chen & Hengqiang Ye & Xiu-Liang Ma, 2023. "Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-38548-9
    DOI: 10.1038/s41467-023-38548-9
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    References listed on IDEAS

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