Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters
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DOI: 10.1038/s41467-024-53857-3
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- Yasuyuki Kobayashi & Kazuhide Kumakura & Tetsuya Akasaka & Toshiki Makimoto, 2012. "Layered boron nitride as a release layer for mechanical transfer of GaN-based devices," Nature, Nature, vol. 484(7393), pages 223-227, April.
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- Yoshitaka Taniyasu & Makoto Kasu & Toshiki Makimoto, 2006. "An aluminium nitride light-emitting diode with a wavelength of 210 nanometres," Nature, Nature, vol. 441(7091), pages 325-328, May.
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