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Well-defined double hysteresis loop in NaNbO3 antiferroelectrics

Author

Listed:
  • Nengneng Luo

    (Environment and Materials; Guangxi University)

  • Li Ma

    (Environment and Materials; Guangxi University
    Guangxi University)

  • Gengguang Luo

    (Environment and Materials; Guangxi University)

  • Chao Xu

    (The Hong Kong Polytechnic University)

  • Lixiang Rao

    (Beijing Institute of Technology)

  • Zhengu Chen

    (Environment and Materials; Guangxi University
    Guangxi University)

  • Zhenyong Cen

    (Environment and Materials; Guangxi University)

  • Qin Feng

    (Environment and Materials; Guangxi University)

  • Xiyong Chen

    (Environment and Materials; Guangxi University)

  • Fujita Toyohisa

    (Environment and Materials; Guangxi University)

  • Ye Zhu

    (The Hong Kong Polytechnic University)

  • Jiawang Hong

    (Beijing Institute of Technology)

  • Jing-Feng Li

    (Tsinghua University)

  • Shujun Zhang

    (University of Wollongong)

Abstract

Antiferroelectrics (AFEs) are promising candidates in energy-storage capacitors, electrocaloric solid-cooling, and displacement transducers. As an actively studied lead-free antiferroelectric (AFE) material, NaNbO3 has long suffered from its ferroelectric (FE)-like polarization-electric field (P-E) hysteresis loops with high remnant polarization and large hysteresis. Guided by theoretical calculations, a new strategy of reducing the oxygen octahedral tilting angle is proposed to stabilize the AFE P phase (Space group Pbma) of NaNbO3. To validate this, we judiciously introduced CaHfO3 with a low Goldschmidt tolerance factor and AgNbO3 with a low electronegativity difference into NaNbO3, the decreased cation displacements and [BO6] octahedral tilting angles were confirmed by Synchrotron X-ray powder diffraction and aberration-corrected scanning transmission electron microscopy. Of particular importance is that the 0.75NaNbO3−0.20AgNbO3−0.05CaHfO3 ceramic exhibits highly reversible phase transition between the AFE and FE states, showing well-defined double P-E loops and sprout-shaped strain-electric field curves with reduced hysteresis, low remnant polarization, high AFE-FE phase transition field, and zero negative strain. Our work provides a new strategy for designing NaNbO3-based AFE material with well-defined double P-E loops, which can also be extended to discover a variety of new lead-free AFEs.

Suggested Citation

  • Nengneng Luo & Li Ma & Gengguang Luo & Chao Xu & Lixiang Rao & Zhengu Chen & Zhenyong Cen & Qin Feng & Xiyong Chen & Fujita Toyohisa & Ye Zhu & Jiawang Hong & Jing-Feng Li & Shujun Zhang, 2023. "Well-defined double hysteresis loop in NaNbO3 antiferroelectrics," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-37469-x
    DOI: 10.1038/s41467-023-37469-x
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    References listed on IDEAS

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