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Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

Author

Listed:
  • Li-Feng Zhu

    (University of Science and Technology Beijing)

  • Shiqing Deng

    (University of Science and Technology Beijing)

  • Lei Zhao

    (Hebei University)

  • Gen Li

    (Tsinghua University)

  • Qi Wang

    (University of Science and Technology Beijing)

  • Linhai Li

    (University of Science and Technology Beijing)

  • Yongke Yan

    (Xi’an Jiaotong University)

  • He Qi

    (University of Science and Technology Beijing)

  • Bo-Ping Zhang

    (University of Science and Technology Beijing)

  • Jun Chen

    (University of Science and Technology Beijing)

  • Jing-Feng Li

    (Tsinghua University)

Abstract

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO3-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm−1 is realized in the Sm0.05Ag0.85Nb0.7Ta0.3O3 multilayer capacitors, especially with an ultrahigh Urec ~14 J·cm−3, excellent η ~ 85% and PD,max ~ 102.84 MW·cm−3, manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.

Suggested Citation

  • Li-Feng Zhu & Shiqing Deng & Lei Zhao & Gen Li & Qi Wang & Linhai Li & Yongke Yan & He Qi & Bo-Ping Zhang & Jun Chen & Jing-Feng Li, 2023. "Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-36919-w
    DOI: 10.1038/s41467-023-36919-w
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    References listed on IDEAS

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    1. Nengneng Luo & Kai Han & Matthew J. Cabral & Xiaozhou Liao & Shujun Zhang & Changzhong Liao & Guangzu Zhang & Xiyong Chen & Qin Feng & Jing-Feng Li & Yuezhou Wei, 2020. "Constructing phase boundary in AgNbO3 antiferroelectrics: pathway simultaneously achieving high energy density and efficiency," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
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    Cited by:

    1. Weichen Zhao & Diming Xu & Da Li & Max Avdeev & Hongmei Jing & Mengkang Xu & Yan Guo & Dier Shi & Tao Zhou & Wenfeng Liu & Dong Wang & Di Zhou, 2023. "Broad-high operating temperature range and enhanced energy storage performances in lead-free ferroelectrics," Nature Communications, Nature, vol. 14(1), pages 1-11, December.

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