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Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends

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  • Omar Sarwar Chaudhary

    (School of Physics, Engineering and Computer Science, University of Hertfordshire, Hatfield AL10 9AB, UK)

  • Mouloud Denaï

    (School of Physics, Engineering and Computer Science, University of Hertfordshire, Hatfield AL10 9AB, UK)

  • Shady S. Refaat

    (School of Physics, Engineering and Computer Science, University of Hertfordshire, Hatfield AL10 9AB, UK
    Department of Electrical and Computer Engineering, Texas A&M University at Qatar, Doha 23874, Qatar)

  • Georgios Pissanidis

    (Enoda Ltd., Edinburgh EH3 9EG, UK)

Abstract

Silicon (Si)-based semiconductor devices have long dominated the power electronics industry and are used in almost every application involving power conversion. Examples of these include metal-oxide-semiconductor field-effect transistors (MOSFETs), insulated-gate bipolar transistors (IGBTs), gate turn-off (GTO), thyristors, and bipolar junction transistor (BJTs). However, for many applications, power device requirements such as higher blocking voltage capability, higher switching frequencies, lower switching losses, higher temperature withstand, higher power density in power converters, and enhanced efficiency and reliability have reached a stage where the present Si-based power devices cannot cope with the growing demand and would usually require large, costly cooling systems and output filters to meet the requirements of the application. Wide bandgap (WBG) power semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond (Dia) have recently emerged in the commercial market, with superior material properties that promise substantial performance improvements and are expected to gradually replace the traditional Si-based devices in various power electronics applications. WBG power devices can significantly improve the efficiency of power electronic converters by reducing losses and making power conversion devices smaller in size and weight. The aim of this paper is to highlight the technical and market potential of WBG semiconductors. A detailed short-term and long-term analysis is presented in terms of cost, energy impact, size, and efficiency improvement in various applications, including motor drives, automotive, data centers, aerospace, power systems, distributed energy systems, and consumer electronics. In addition, the paper highlights the benefits of WBG semiconductors in power conversion applications by considering the current and future market trends.

Suggested Citation

  • Omar Sarwar Chaudhary & Mouloud Denaï & Shady S. Refaat & Georgios Pissanidis, 2023. "Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends," Energies, MDPI, vol. 16(18), pages 1-27, September.
  • Handle: RePEc:gam:jeners:v:16:y:2023:i:18:p:6689-:d:1242480
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    References listed on IDEAS

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    1. Hema Lata Rao Maddi & Susanna Yu & Shengnan Zhu & Tianshi Liu & Limeng Shi & Minseok Kang & Diang Xing & Suvendu Nayak & Marvin H. White & Anant K. Agarwal, 2021. "The Road to a Robust and Affordable SiC Power MOSFET Technology," Energies, MDPI, vol. 14(24), pages 1-20, December.
    2. Sayan Seal & Homer Alan Mantooth, 2017. "High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions," Energies, MDPI, vol. 10(3), pages 1-30, March.
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    Cited by:

    1. Tianqi Huang & Bhanu Pratap Singh & Yongqian Liu & Staffan Norrga, 2024. "Failure Characterization of Discrete SiC MOSFETs under Forward Power Cycling Test," Energies, MDPI, vol. 17(11), pages 1-22, May.

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