IDEAS home Printed from https://ideas.repec.org/a/gam/jeners/v15y2022i8p2966-d796545.html
   My bibliography  Save this article

An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters

Author

Listed:
  • Dong Yan

    (College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China)

  • Lijun Hang

    (College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China)

  • Yuanbin He

    (College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China)

  • Zhen He

    (College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China)

  • Pingliang Zeng

    (College of Automation, Hangzhou Dianzi University, Hangzhou 310018, China)

Abstract

The Gallium Nitride high electron mobility transistor (GaN HEMT) has been considered as a potential power semiconductor device for high switching speed and high power density application since its commercialization. Compared with the traditional Si transistors, GaN HEMT has faster switching speed and lower on-off loss. As a result, it is more sensitive to the nonlinear parameters due to the fast switching speed. The subsequent voltage and current overshooting will affect the efficiency and safety of the GaN HEMT and power electronic systems. In this paper, an accurate switching transient analytical model for GaN HEMT is proposed, which considers the effects of parasitic inductances, nonlinear junction capacitances and nonlinear transconductance. The model characteristic of turn-ON process and turn-OFF process is illustrated in detail, and the equivalent circuits are derived for each switching transition. The accuracy of the proposed model can be verified by comparing the predicted switching waveform and switching loss with that of the experimental results based on the double pulse test (DPT) circuit. Compared with the conventional model, the proposed model is more accurate and matches better with the experimental results than the conventional model. Finally, this model can be used for analyzing the influences of gate resistance, nonlinear junction capacitances, and parasitic inductances on switching transient waveform and refining calculation switching loss.

Suggested Citation

  • Dong Yan & Lijun Hang & Yuanbin He & Zhen He & Pingliang Zeng, 2022. "An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters," Energies, MDPI, vol. 15(8), pages 1-18, April.
    • Handle: RePEc:gam:jeners:v:15:y:2022:i:8:p:2966-:d:796545
    as

    Download full text from publisher

    File URL: https://www.mdpi.com/1996-1073/15/8/2966/pdf
    Download Restriction: no
    File URL: https://www.mdpi.com/1996-1073/15/8/2966/
    Download Restriction: no
    ---><---

    References listed on IDEAS

    as
    1. Joao L. Afonso & Mohamed Tanta & José Gabriel Oliveira Pinto & Luis F. C. Monteiro & Luis Machado & Tiago J. C. Sousa & Vitor Monteiro, 2021. "A Review on Power Electronics Technologies for Power Quality Improvement," Energies, MDPI, vol. 14(24), pages 1-71, December.
    2. Hema Lata Rao Maddi & Susanna Yu & Shengnan Zhu & Tianshi Liu & Limeng Shi & Minseok Kang & Diang Xing & Suvendu Nayak & Marvin H. White & Anant K. Agarwal, 2021. "The Road to a Robust and Affordable SiC Power MOSFET Technology," Energies, MDPI, vol. 14(24), pages 1-20, December.
    Full references (including those not matched with items on IDEAS)

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Radin Za’im & Jafferi Jamaludin & Yushaizad Yusof & Nasrudin Abd Rahim, 2022. "High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier," Energies, MDPI, vol. 15(14), pages 1-34, July.

    Most related items

    These are the items that most often cite the same works as this one and are cited by the same works as this one.
    1. Lutfu Saribulut & Gorkem Ok & Arman Ameen, 2023. "A Case Study on National Electricity Blackout of Turkey," Energies, MDPI, vol. 16(11), pages 1-20, May.
    2. Walter Gil-González & Oscar Danilo Montoya & Sebastián Riffo & Carlos Restrepo & Javier Muñoz, 2023. "A Global Tracking Sensorless Adaptive PI-PBC Design for Output Voltage Regulation in a Boost Converter Feeding a DC Microgrid," Energies, MDPI, vol. 16(3), pages 1-18, January.
    3. Krzysztof Sozanski & Pawel Szczesniak, 2023. "Advanced Control Algorithm for Three-Phase Shunt Active Power Filter Using Sliding DFT," Energies, MDPI, vol. 16(3), pages 1-17, February.
    4. Omar Sarwar Chaudhary & Mouloud Denaï & Shady S. Refaat & Georgios Pissanidis, 2023. "Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends," Energies, MDPI, vol. 16(18), pages 1-27, September.
    5. Khaled Chahine & Mohamad Tarnini & Nazih Moubayed & Abdallah El Ghaly, 2023. "Power Quality Enhancement of Grid-Connected Renewable Systems Using a Matrix-Pencil-Based Active Power Filter," Sustainability, MDPI, vol. 15(1), pages 1-19, January.
    6. Marcin Maciążek, 2022. "Active Power Filters and Power Quality," Energies, MDPI, vol. 15(22), pages 1-4, November.
    7. Andrzej Szromba, 2023. "Improving the Efficiency of the Shunt Active Power Filter Acting with the Use of the Hysteresis Current Control Technique," Energies, MDPI, vol. 16(10), pages 1-16, May.

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:gam:jeners:v:15:y:2022:i:8:p:2966-:d:796545. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    If CitEc recognized a bibliographic reference but did not link an item in RePEc to it, you can help with this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: MDPI Indexing Manager (email available below). General contact details of provider: https://www.mdpi.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.