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The Road to a Robust and Affordable SiC Power MOSFET Technology

Author

Listed:
  • Hema Lata Rao Maddi

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Susanna Yu

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Shengnan Zhu

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Tianshi Liu

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Limeng Shi

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Minseok Kang

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Diang Xing

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Suvendu Nayak

    (Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India)

  • Marvin H. White

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

  • Anant K. Agarwal

    (Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA)

Abstract

This article provides a detailed study of performance and reliability issues and trade-offs in silicon carbide (SiC) power MOSFETs. The reliability issues such as threshold voltage variation across devices from the same vendor, instability of threshold voltage under positive and negative gate bias, long-term reliability of gate oxide, screening of devices with extrinsic defects by means of gate voltage, body diode degradation, and short circuit withstand time are investigated through testing of commercial devices from different vendors and two-dimensional simulations. Price roadmap and foundry models of SiC MOSFETs are discussed. Future development of mixed-mode CMOS circuits with high voltage lateral MOSFETs along with 4−6× higher power handling capability compared to silicon circuits has been described.

Suggested Citation

  • Hema Lata Rao Maddi & Susanna Yu & Shengnan Zhu & Tianshi Liu & Limeng Shi & Minseok Kang & Diang Xing & Suvendu Nayak & Marvin H. White & Anant K. Agarwal, 2021. "The Road to a Robust and Affordable SiC Power MOSFET Technology," Energies, MDPI, vol. 14(24), pages 1-20, December.
    • Handle: RePEc:gam:jeners:v:14:y:2021:i:24:p:8283-:d:698159
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    Citations

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    Cited by:

    1. Dong Yan & Lijun Hang & Yuanbin He & Zhen He & Pingliang Zeng, 2022. "An Accurate Switching Transient Analytical Model for GaN HEMT under the Influence of Nonlinear Parameters," Energies, MDPI, vol. 15(8), pages 1-18, April.
    2. Omar Sarwar Chaudhary & Mouloud Denaï & Shady S. Refaat & Georgios Pissanidis, 2023. "Technology and Applications of Wide Bandgap Semiconductor Materials: Current State and Future Trends," Energies, MDPI, vol. 16(18), pages 1-27, September.

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