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A High-Efficiency QR Flyback DC–DC Converter with Reduced Switch Voltage Stress Realized by Applying a Self-Driven Active Snubber (SDAS)

Author

Listed:
  • Jeong-Sang Yoo

    (Department of Electronics Engineering, Cheongju University, Cheongju 28503, Republic of Korea)

  • Jong-Ok Baek

    (R&D Division, Zinnos Inc., Busan 49108, Republic of Korea)

  • Tae-Young Ahn

    (Department of Electrical & Control Engineering, Cheongju University, Cheongju 28503, Republic of Korea)

Abstract

In this paper, a QR flyback converter using a self-driven active snubber (SDAS) was proposed to solve the problem of voltage surge in the switch of QR flyback converters. In the proposed converter, the SDAS consisting of a clamping capacitor and an active switch can be configured in parallel with the main switch or transformer to reduce the voltage surge in the switch. To confirm the steady-state characteristics of the QR flyback converter to which the proposed SDAS is applied, equivalent circuits for each state were constructed, and the equations and characteristics for each state were determined. A 60 W class small AC–DC adapter was constructed to confirm the effectiveness of the proposed converter and the control circuit method, and the experimental results were analyzed. The size of the experimental AC–DC adapter was 74 × 29 × 23 mm , and it had a high power density of 20 W / in 3 or more. The experimental circuit was limited to the high power conversion efficiency of up to 91.56%, and the maximum voltage surge in the switch was approximately 450 V. One of the reasons for such high efficiency is the SDAS circuit, which sufficiently reduces the voltage surge of the QR flyback switch, compared with the RCD clamp circuit, and does not consume power in principle.

Suggested Citation

  • Jeong-Sang Yoo & Jong-Ok Baek & Tae-Young Ahn, 2023. "A High-Efficiency QR Flyback DC–DC Converter with Reduced Switch Voltage Stress Realized by Applying a Self-Driven Active Snubber (SDAS)," Energies, MDPI, vol. 16(3), pages 1-21, January.
    • Handle: RePEc:gam:jeners:v:16:y:2023:i:3:p:1068-:d:1039901
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    References listed on IDEAS

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    1. Xiaobin Li & Hongbo Ma & Junhong Yi & Song Lu & Jianping Xu, 2020. "A Comparative Study of GaN HEMT and Si MOSFET-Based Active Clamp Forward Converters," Energies, MDPI, vol. 13(16), pages 1-14, August.
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