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Radiant thermal conversion in 0.53 eV GaInAsSb thermophotovoltaic diode

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  • Wang, Yu
  • Lou, Yi-yi

Abstract

Based on the developed analytical absorption model for 0.53 eV GaInAsSb alloy and the suggested material parameters, evaluating active layer controlled thermal conversion has been systematically done for both p-on-n and n-on-p configuration in its normal and inverted construction. A universal, spectrum-insensitive optimal doping, Na(d) = 3 × 1017 cm−3, is observed in diode light-doped layer for all concerned configurations. By improving the doping in the light-doped layer, thickness compensation between emitter and base has been observed for normal structures and, for each considered structure, suboptimal structures can be employed by consuming less material to achieve comparable output as that for optimal one. Comparing to GaSb diode, 2–3 fold efficiency enhancement can be expected for low-temperature spectrum illumination, making the concerned device an efficient candidate for low-temperature TPV applications.

Suggested Citation

  • Wang, Yu & Lou, Yi-yi, 2015. "Radiant thermal conversion in 0.53 eV GaInAsSb thermophotovoltaic diode," Renewable Energy, Elsevier, vol. 75(C), pages 8-13.
    • Handle: RePEc:eee:renene:v:75:y:2015:i:c:p:8-13
    DOI: 10.1016/j.renene.2014.09.031
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    References listed on IDEAS

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    1. Wang, Yu & Zhang, Xingwang & Zhang, Xiulan & Chen, Nuofu, 2012. "Electricity generation from thermal irradiation governed by GaSb active layer," Renewable Energy, Elsevier, vol. 48(C), pages 231-237.
    2. Qiu, K. & Hayden, A.C.S., 2012. "Development of a novel cascading TPV and TE power generation system," Applied Energy, Elsevier, vol. 91(1), pages 304-308.
    3. Coutts, T. J., 1999. "A review of progress in thermophotovoltaic generation of electricity," Renewable and Sustainable Energy Reviews, Elsevier, vol. 3(2-3), pages 77-184, June.
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