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Deterministic mechanisms of spiking in diffusive memristors

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  • Ushakov, Yury
  • Akther, Amir
  • Borisov, Pavel
  • Pattnaik, Debi
  • Savel’ev, Sergey
  • Balanov, Alexander G.

Abstract

Diffusive memristors, which have been recently fabricated and measured, attract a significant interest being among the best candidates to mimic neuron activities and to implement novel computing paradigms. Such devices are capable of exhibiting a combination of dynamical, chaotic, and stochastic phenomena needed for efficient neuromorphic computational systems. However, understanding the contribution of deterministic and stochastic dynamics to the functional properties of a diffusive memristor is still an open problem. To study the deterministic mechanisms governing the dynamics of diffusive memristors, we analyze a model of a memristive circuit when the effects of the temperature noise are neglected. We reveal instabilities, which shape the current-voltage characteristic of the device and imply the onset of current self-oscillations. Finally, the results of modeling are compared with experimentally measured current-voltage characteristics.

Suggested Citation

  • Ushakov, Yury & Akther, Amir & Borisov, Pavel & Pattnaik, Debi & Savel’ev, Sergey & Balanov, Alexander G., 2021. "Deterministic mechanisms of spiking in diffusive memristors," Chaos, Solitons & Fractals, Elsevier, vol. 149(C).
    • Handle: RePEc:eee:chsofr:v:149:y:2021:i:c:s0960077921003519
    DOI: 10.1016/j.chaos.2021.110997
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    References listed on IDEAS

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    1. Filatov, D.O. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Shenina, M.E. & Antonov, I.N. & Gorshkov, O.N. & Agudov, N.V. & Carollo, A. & Valenti, D. & Spagnolo, B., 2022. "Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor," Chaos, Solitons & Fractals, Elsevier, vol. 156(C).

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