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Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors

Author

Listed:
  • Wei Yi

    (Hewlett-Packard Laboratories
    HRL Laboratories, LLC)

  • Sergey E. Savel'ev

    (Loughborough University)

  • Gilberto Medeiros-Ribeiro

    (Hewlett-Packard Laboratories
    UFMG)

  • Feng Miao

    (Hewlett-Packard Laboratories
    National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University)

  • M.-X. Zhang

    (Hewlett-Packard Laboratories)

  • J. Joshua Yang

    (Hewlett-Packard Laboratories
    University of Massachusetts)

  • Alexander M. Bratkovsky

    (Hewlett-Packard Laboratories
    University of California
    P. L. Kapitza Institute for Physical Problems)

  • R. Stanley Williams

    (Hewlett-Packard Laboratories)

Abstract

Tantalum oxide memristors can switch continuously from a low-conductance semiconducting to a high-conductance metallic state. At the boundary between these two regimes are quantized conductance states, which indicate the formation of a point contact within the oxide characterized by multistable conductance fluctuations and enlarged electronic noise. Here, we observe diverse conductance-dependent noise spectra, including a transition from 1/f2 (activated transport) to 1/f (flicker noise) as a function of the frequency f, and a large peak in the noise amplitude at the conductance quantum GQ=2e2/h, in contrast to suppressed noise at the conductance quantum observed in other systems. We model the stochastic behaviour near the point contact regime using Molecular Dynamics–Langevin simulations and understand the observed frequency-dependent noise behaviour in terms of thermally activated atomic-scale fluctuations that make and break a quantum conductance channel. These results provide insights into switching mechanisms and guidance to device operating ranges for different applications.

Suggested Citation

  • Wei Yi & Sergey E. Savel'ev & Gilberto Medeiros-Ribeiro & Feng Miao & M.-X. Zhang & J. Joshua Yang & Alexander M. Bratkovsky & R. Stanley Williams, 2016. "Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors," Nature Communications, Nature, vol. 7(1), pages 1-6, September.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms11142
    DOI: 10.1038/ncomms11142
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    Cited by:

    1. Ushakov, Yury & Akther, Amir & Borisov, Pavel & Pattnaik, Debi & Savel’ev, Sergey & Balanov, Alexander G., 2021. "Deterministic mechanisms of spiking in diffusive memristors," Chaos, Solitons & Fractals, Elsevier, vol. 149(C).
    2. Agudov, N.V. & Dubkov, A.A. & Safonov, A.V. & Krichigin, A.V. & Kharcheva, A.A. & Guseinov, D.V. & Koryazhkina, M.N. & Novikov, A.S. & Shishmakova, V.A. & Antonov, I.N. & Carollo, A. & Spagnolo, B., 2021. "Stochastic model of memristor based on the length of conductive region," Chaos, Solitons & Fractals, Elsevier, vol. 150(C).

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