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Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance

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  • Sergey E. Savel’ev
  • Fabio Marchesoni
  • Alexander M. Bratkovsky

Abstract

We show how a simple model nanoswitch can perform as a memory resistor. Its resistance is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule’s heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit 1/f 2 → 1/f crossover, in agreement with recent experimental results. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Suggested Citation

  • Sergey E. Savel’ev & Fabio Marchesoni & Alexander M. Bratkovsky, 2013. "Mesoscopic resistive switch: non-volatility, hysteresis and negative differential resistance," The European Physical Journal B: Condensed Matter and Complex Systems, Springer;EDP Sciences, vol. 86(12), pages 1-6, December.
    • Handle: RePEc:spr:eurphb:v:86:y:2013:i:12:p:1-6:10.1140/epjb/e2013-40966-4
    DOI: 10.1140/epjb/e2013-40966-4
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    Cited by:

    1. Wojtusiak, A.M. & Balanov, A.G. & Savel’ev, S.E., 2021. "Intermittent and metastable chaos in a memristive artificial neuron with inertia," Chaos, Solitons & Fractals, Elsevier, vol. 142(C).
    2. Ushakov, Yury & Balanov, Alexander & Savel’ev, Sergey, 2021. "Role of noise in spiking dynamics of diffusive memristor driven by heating-cooling cycles," Chaos, Solitons & Fractals, Elsevier, vol. 145(C).
    3. Ushakov, Yury & Akther, Amir & Borisov, Pavel & Pattnaik, Debi & Savel’ev, Sergey & Balanov, Alexander G., 2021. "Deterministic mechanisms of spiking in diffusive memristors," Chaos, Solitons & Fractals, Elsevier, vol. 149(C).

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    Keywords

    Mesoscopic and Nanoscale Systems;

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