Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device
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DOI: 10.1016/j.chaos.2021.110783
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Cited by:
- Kim, Dahye & Kim, Sunghun & Kim, Sungjun, 2021. "Logic-in-memory application of CMOS compatible silicon nitride memristor," Chaos, Solitons & Fractals, Elsevier, vol. 153(P2).
- Ryu, Hojeong & Kim, Sungjun, 2021. "Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification," Chaos, Solitons & Fractals, Elsevier, vol. 150(C).
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