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Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors

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  • Park, Jinwoo
  • Kim, Tae-Hyeon
  • Kim, Sungjoon
  • Lee, Geun Ho
  • Nili, Hussein
  • Kim, Hyungjin

Abstract

In this study, we evaluate the performance of a physical unclonable function (PUF) using Al2O3/TiOx based memristors. Through a conduction mechanism analysis, it is confirmed that the distribution of high-resistance state (HRS) is wider than that of low-resistance state (LRS) due to the direct-tunneling gap. Furthermore, cycle-to-cycle variation and random telegraph noise (RTN) characteristics which can affect the reliability of the PUF are also analyzed. Since the switching characteristics of the devices are less affected by temperature in the LRS thanks to ohmic conduction, the device state of a whole array is determined as the LRS for a better reliability. In addition, three kinds of response extraction methods are compared by evaluating the diffuseness and uniqueness with 2 × 2 switch block for the improved randomness. Finally, the reliability of the PUF is verified considering the measured conductance dependency on temperature and noise effect, and the bit error rates are compared between two states.

Suggested Citation

  • Park, Jinwoo & Kim, Tae-Hyeon & Kim, Sungjoon & Lee, Geun Ho & Nili, Hussein & Kim, Hyungjin, 2021. "Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors," Chaos, Solitons & Fractals, Elsevier, vol. 152(C).
    • Handle: RePEc:eee:chsofr:v:152:y:2021:i:c:s0960077921007426
    DOI: 10.1016/j.chaos.2021.111388
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    Cited by:

    1. Lee, Geun Ho & Kim, Tae-Hyeon & Song, Min Suk & Park, Jinwoo & Kim, Sungjoon & Hong, Kyungho & Kim, Yoon & Park, Byung-Gook & Kim, Hyungjin, 2022. "Effect of weight overlap region on neuromorphic system with memristive synaptic devices," Chaos, Solitons & Fractals, Elsevier, vol. 157(C).
    2. Choi, Woo Sik & Jang, Jun Tae & Kim, Donguk & Yang, Tae Jun & Kim, Changwook & Kim, Hyungjin & Kim, Dae Hwan, 2022. "Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications," Chaos, Solitons & Fractals, Elsevier, vol. 156(C).
    3. Lee, Geun Ho & Kim, Tae-Hyeon & Youn, Sangwook & Park, Jinwoo & Kim, Sungjoon & Kim, Hyungjin, 2023. "Low-fluctuation nonlinear model using incremental step pulse programming with memristive devices," Chaos, Solitons & Fractals, Elsevier, vol. 170(C).
    4. Jeong, Dong Geun & Park, Eunpyo & Jo, Yooyeon & Yang, Eunyeong & Noh, Gichang & Lee, Dae Kyu & Kim, Min Jee & Jeong, YeonJoo & Jang, Hyun Jae & Joe, Daniel J. & Chang, Jiwon & Kwak, Joon Young, 2024. "Grain boundary control for high-reliability HfO2-based RRAM," Chaos, Solitons & Fractals, Elsevier, vol. 183(C).
    5. Choi, Woo Sik & Kim, Donguk & Yang, Tae Jun & Chae, Inseok & Kim, Changwook & Kim, Hyungjin & Kim, Dae Hwan, 2022. "Electrode-dependent electrical switching characteristics of InGaZnO memristor," Chaos, Solitons & Fractals, Elsevier, vol. 158(C).
    6. Kim, Tae-Hyeon & Kim, Sungjoon & Hong, Kyungho & Park, Jinwoo & Hwang, Yeongjin & Park, Byung-Gook & Kim, Hyungjin, 2021. "Multilevel switching memristor by compliance current adjustment for off-chip training of neuromorphic system," Chaos, Solitons & Fractals, Elsevier, vol. 153(P2).

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