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Disorder-induced nonlinear Hall effect with time-reversal symmetry

Author

Listed:
  • Z. Z. Du

    (Southern University of Science and Technology
    Shenzhen Key Laboratory of Quantum Science and Engineering
    Peng Cheng Laboratory)

  • C. M. Wang

    (Southern University of Science and Technology
    Shenzhen Key Laboratory of Quantum Science and Engineering
    Shanghai Normal University)

  • Shuai Li

    (Southern University of Science and Technology
    Shenzhen Key Laboratory of Quantum Science and Engineering)

  • Hai-Zhou Lu

    (Southern University of Science and Technology
    Shenzhen Key Laboratory of Quantum Science and Engineering
    Peng Cheng Laboratory
    Shanghai Jiao Tong University)

  • X. C. Xie

    (Peking University
    Beijing Academy of Quantum Information Sciences
    University of Chinese Academy of Sciences)

Abstract

The nonlinear Hall effect has opened the door towards deeper understanding of topological states of matter. Disorder plays indispensable roles in various linear Hall effects, such as the localization in the quantized Hall effects and the extrinsic mechanisms of the anomalous, spin, and valley Hall effects. Unlike in the linear Hall effects, disorder enters the nonlinear Hall effect even in the leading order. Here, we derive the formulas of the nonlinear Hall conductivity in the presence of disorder scattering. We apply the formulas to calculate the nonlinear Hall response of the tilted 2D Dirac model, which is the symmetry-allowed minimal model for the nonlinear Hall effect and can serve as a building block in realistic band structures. More importantly, we construct the general scaling law of the nonlinear Hall effect, which may help in experiments to distinguish disorder-induced contributions to the nonlinear Hall effect in the future.

Suggested Citation

  • Z. Z. Du & C. M. Wang & Shuai Li & Hai-Zhou Lu & X. C. Xie, 2019. "Disorder-induced nonlinear Hall effect with time-reversal symmetry," Nature Communications, Nature, vol. 10(1), pages 1-6, December.
    • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10941-3
    DOI: 10.1038/s41467-019-10941-3
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    Cited by:

    1. Bin Cheng & Yang Gao & Zhi Zheng & Shuhang Chen & Zheng Liu & Ling Zhang & Qi Zhu & Hui Li & Lin Li & Changgan Zeng, 2024. "Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
    2. Yuki M. Itahashi & Toshiya Ideue & Shintaro Hoshino & Chihiro Goto & Hiromasa Namiki & Takao Sasagawa & Yoshihiro Iwasa, 2022. "Giant second harmonic transport under time-reversal symmetry in a trigonal superconductor," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
    3. Teng Ma & Hao Chen & Kunihiro Yananose & Xin Zhou & Lin Wang & Runlai Li & Ziyu Zhu & Zhenyue Wu & Qing-Hua Xu & Jaejun Yu & Cheng Wei Qiu & Alessandro Stroppa & Kian Ping Loh, 2022. "Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
    4. Xiu Fang Lu & Cheng-Ping Zhang & Naizhou Wang & Dan Zhao & Xin Zhou & Weibo Gao & Xian Hui Chen & K. T. Law & Kian Ping Loh, 2024. "Nonlinear transport and radio frequency rectification in BiTeBr at room temperature," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    5. Lujin Min & Hengxin Tan & Zhijian Xie & Leixin Miao & Ruoxi Zhang & Seng Huat Lee & Venkatraman Gopalan & Chao-Xing Liu & Nasim Alem & Binghai Yan & Zhiqiang Mao, 2023. "Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material," Nature Communications, Nature, vol. 14(1), pages 1-9, December.

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