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Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material

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Listed:
  • Lujin Min

    (Pennsylvania State University
    Pennsylvania State University)

  • Hengxin Tan

    (Weizmann Institute of Science)

  • Zhijian Xie

    (North Carolina Agriculture &Technical State University)

  • Leixin Miao

    (Pennsylvania State University)

  • Ruoxi Zhang

    (Pennsylvania State University)

  • Seng Huat Lee

    (Pennsylvania State University
    Pennsylvania State University)

  • Venkatraman Gopalan

    (Pennsylvania State University)

  • Chao-Xing Liu

    (Pennsylvania State University)

  • Nasim Alem

    (Pennsylvania State University)

  • Binghai Yan

    (Weizmann Institute of Science)

  • Zhiqiang Mao

    (Pennsylvania State University
    Pennsylvania State University
    Pennsylvania State University)

Abstract

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device’s functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE’s applications.

Suggested Citation

  • Lujin Min & Hengxin Tan & Zhijian Xie & Leixin Miao & Ruoxi Zhang & Seng Huat Lee & Venkatraman Gopalan & Chao-Xing Liu & Nasim Alem & Binghai Yan & Zhiqiang Mao, 2023. "Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-35989-0
    DOI: 10.1038/s41467-023-35989-0
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    References listed on IDEAS

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    1. Bin Cheng & Yang Gao & Zhi Zheng & Shuhang Chen & Zheng Liu & Ling Zhang & Qi Zhu & Hui Li & Lin Li & Changgan Zeng, 2024. "Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium," Nature Communications, Nature, vol. 15(1), pages 1-7, December.
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