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Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals

Author

Listed:
  • Yaru Gong

    (Nanjing University of Science and Technology)

  • Wei Dou

    (Nanjing University of Science and Technology)

  • Bochen Lu

    (Xi’an Jiaotong University)

  • Xuemei Zhang

    (Ningxia Normal University)

  • He Zhu

    (Nanjing University of Science and Technology)

  • Pan Ying

    (Nanjing University of Science and Technology)

  • Qingtang Zhang

    (Nanjing University of Science and Technology)

  • Yuqi Liu

    (Nanjing University of Science and Technology)

  • Yanan Li

    (Nanjing University of Science and Technology)

  • Xinqi Huang

    (Nanjing University of Science and Technology)

  • Muhammad Faisal Iqbal

    (Nanjing University of Science and Technology)

  • Shihua Zhang

    (Nanjing University of Science and Technology)

  • Di Li

    (Chinese Academy of Sciences)

  • Yongsheng Zhang

    (Qufu Normal University)

  • Haijun Wu

    (Xi’an Jiaotong University)

  • Guodong Tang

    (Nanjing University of Science and Technology)

Abstract

N-type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n-type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n-type SnSe0.92 + 0.03WCl6.

Suggested Citation

  • Yaru Gong & Wei Dou & Bochen Lu & Xuemei Zhang & He Zhu & Pan Ying & Qingtang Zhang & Yuqi Liu & Yanan Li & Xinqi Huang & Muhammad Faisal Iqbal & Shihua Zhang & Di Li & Yongsheng Zhang & Haijun Wu & G, 2024. "Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals," Nature Communications, Nature, vol. 15(1), pages 1-13, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48635-0
    DOI: 10.1038/s41467-024-48635-0
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    References listed on IDEAS

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