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Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

Author

Listed:
  • Yaoxin Li

    (Tsinghua University)

  • Yongchao Wang

    (Tsinghua University)

  • Zichen Lian

    (Tsinghua University)

  • Hao Li

    (Tsinghua University
    Tsinghua University)

  • Zhiting Gao

    (Beijing Academy of Quantum Information Sciences)

  • Liangcai Xu

    (Tsinghua University)

  • Huan Wang

    (Renmin University of China
    Renmin University of China)

  • Rui’e Lu

    (Guangzhou University)

  • Longfei Li

    (School of Physics, Peking University)

  • Yang Feng

    (Beijing Academy of Quantum Information Sciences)

  • Jinjiang Zhu

    (Fudan University)

  • Liangyang Liu

    (Tsinghua University)

  • Yongqian Wang

    (Renmin University of China
    Renmin University of China)

  • Bohan Fu

    (Renmin University of China
    Renmin University of China)

  • Shuai Yang

    (Renmin University of China
    Renmin University of China)

  • Luyi Yang

    (Tsinghua University
    Frontier Science Center for Quantum Information)

  • Yihua Wang

    (Fudan University
    Shanghai Research Center for Quantum Sciences)

  • Tianlong Xia

    (Renmin University of China
    Renmin University of China)

  • Chang Liu

    (Southern University of Science and Technology)

  • Shuang Jia

    (School of Physics, Peking University
    Peking University
    University of Chinese Academy of Sciences)

  • Yang Wu

    (Beijing University of Chemical Technology)

  • Jinsong Zhang

    (Tsinghua University
    Frontier Science Center for Quantum Information
    Hefei National Laboratory)

  • Yayu Wang

    (Tsinghua University
    Frontier Science Center for Quantum Information
    Hefei National Laboratory)

  • Chang Liu

    (Renmin University of China
    Renmin University of China)

Abstract

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Suggested Citation

  • Yaoxin Li & Yongchao Wang & Zichen Lian & Hao Li & Zhiting Gao & Liangcai Xu & Huan Wang & Rui’e Lu & Longfei Li & Yang Feng & Jinjiang Zhu & Liangyang Liu & Yongqian Wang & Bohan Fu & Shuai Yang & Lu, 2024. "Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-47779-3
    DOI: 10.1038/s41467-024-47779-3
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