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Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

Author

Listed:
  • Fei Wang

    (The Pennsylvania State University
    Chinese Academy of Sciences
    Harbin Institute of Technology)

  • Xuepeng Wang

    (Nanjing University)

  • Yi-Fan Zhao

    (The Pennsylvania State University)

  • Di Xiao

    (The Pennsylvania State University)

  • Ling-Jie Zhou

    (The Pennsylvania State University)

  • Wei Liu

    (Chinese Academy of Sciences)

  • Zhidong Zhang

    (Chinese Academy of Sciences)

  • Weiwei Zhao

    (Harbin Institute of Technology)

  • Moses H. W. Chan

    (The Pennsylvania State University)

  • Nitin Samarth

    (The Pennsylvania State University)

  • Chaoxing Liu

    (The Pennsylvania State University)

  • Haijun Zhang

    (Nanjing University)

  • Cui-Zu Chang

    (The Pennsylvania State University)

Abstract

The Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

Suggested Citation

  • Fei Wang & Xuepeng Wang & Yi-Fan Zhao & Di Xiao & Ling-Jie Zhou & Wei Liu & Zhidong Zhang & Weiwei Zhao & Moses H. W. Chan & Nitin Samarth & Chaoxing Liu & Haijun Zhang & Cui-Zu Chang, 2021. "Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-020-20349-z
    DOI: 10.1038/s41467-020-20349-z
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    Cited by:

    1. Yaoxin Li & Yongchao Wang & Zichen Lian & Hao Li & Zhiting Gao & Liangcai Xu & Huan Wang & Rui’e Lu & Longfei Li & Yang Feng & Jinjiang Zhu & Liangyang Liu & Yongqian Wang & Bohan Fu & Shuai Yang & Lu, 2024. "Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4," Nature Communications, Nature, vol. 15(1), pages 1-9, December.
    2. Yongxi Ou & Wilson Yanez & Run Xiao & Max Stanley & Supriya Ghosh & Boyang Zheng & Wei Jiang & Yu-Sheng Huang & Timothy Pillsbury & Anthony Richardella & Chaoxing Liu & Tony Low & Vincent H. Crespi & , 2022. "ZrTe2/CrTe2: an epitaxial van der Waals platform for spintronics," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    3. Jiaqi Cai & Dmitry Ovchinnikov & Zaiyao Fei & Minhao He & Tiancheng Song & Zhong Lin & Chong Wang & David Cobden & Jiun-Haw Chu & Yong-Tao Cui & Cui-Zu Chang & Di Xiao & Jiaqiang Yan & Xiaodong Xu, 2022. "Electric control of a canted-antiferromagnetic Chern insulator," Nature Communications, Nature, vol. 13(1), pages 1-7, December.

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