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Ultra-fast switching memristors based on two-dimensional materials

Author

Listed:
  • S. S. Teja Nibhanupudi

    (The University of Texas at Austin)

  • Anupam Roy

    (The University of Texas at Austin
    Birla Institute of Technology)

  • Dmitry Veksler

    (HRL Laboratories)

  • Matthew Coupin

    (The University of Texas at Austin)

  • Kevin C. Matthews

    (The University of Texas at Austin)

  • Matthew Disiena

    (The University of Texas at Austin)

  • Ansh

    (The University of Texas at Austin)

  • Jatin V. Singh

    (The University of Texas at Austin)

  • Ioana R. Gearba-Dolocan

    (The University of Texas at Austin)

  • Jamie Warner

    (The University of Texas at Austin)

  • Jaydeep P. Kulkarni

    (The University of Texas at Austin)

  • Gennadi Bersuker

    (M2D solutions)

  • Sanjay K. Banerjee

    (The University of Texas at Austin)

Abstract

The ability to scale two-dimensional (2D) material thickness down to a single monolayer presents a promising opportunity to realize high-speed energy-efficient memristors. Here, we report an ultra-fast memristor fabricated using atomically thin sheets of 2D hexagonal Boron Nitride, exhibiting the shortest observed switching speed (120 ps) among 2D memristors and low switching energy (2pJ). Furthermore, we study the switching dynamics of these memristors using ultra-short (120ps-3ns) voltage pulses, a frequency range that is highly relevant in the context of modern complementary metal oxide semiconductor (CMOS) circuits. We employ statistical analysis of transient characteristics to gain insights into the memristor switching mechanism. Cycling endurance data confirms the ultra-fast switching capability of these memristors, making them attractive for next generation computing, storage, and Radio-Frequency (RF) circuit applications.

Suggested Citation

  • S. S. Teja Nibhanupudi & Anupam Roy & Dmitry Veksler & Matthew Coupin & Kevin C. Matthews & Matthew Disiena & Ansh & Jatin V. Singh & Ioana R. Gearba-Dolocan & Jamie Warner & Jaydeep P. Kulkarni & Gen, 2024. "Ultra-fast switching memristors based on two-dimensional materials," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-46372-y
    DOI: 10.1038/s41467-024-46372-y
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    References listed on IDEAS

    as
    1. Seunghyun Lee & Joon Sohn & Zizhen Jiang & Hong-Yu Chen & H.-S. Philip Wong, 2015. "Metal oxide-resistive memory using graphene-edge electrodes," Nature Communications, Nature, vol. 6(1), pages 1-7, December.
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