IDEAS home Printed from https://ideas.repec.org/a/nat/nature/v618y2023i7963d10.1038_s41586-023-05973-1.html
   My bibliography  Save this article

Hybrid 2D–CMOS microchips for memristive applications

Author

Listed:
  • Kaichen Zhu

    (King Abdullah University of Science and Technology (KAUST))

  • Sebastian Pazos

    (King Abdullah University of Science and Technology (KAUST))

  • Fernando Aguirre

    (King Abdullah University of Science and Technology (KAUST))

  • Yaqing Shen

    (King Abdullah University of Science and Technology (KAUST))

  • Yue Yuan

    (King Abdullah University of Science and Technology (KAUST))

  • Wenwen Zheng

    (King Abdullah University of Science and Technology (KAUST))

  • Osamah Alharbi

    (King Abdullah University of Science and Technology (KAUST))

  • Marco A. Villena

    (King Abdullah University of Science and Technology (KAUST))

  • Bin Fang

    (King Abdullah University of Science and Technology (KAUST))

  • Xinyi Li

    (Tsinghua University)

  • Alessandro Milozzi

    (Politecnico of Milan)

  • Matteo Farronato

    (Politecnico of Milan)

  • Miguel Muñoz-Rojo

    (University of Twente
    IMN-CNM, CSIC (CEI UAM+CSIC))

  • Tao Wang

    (Soochow University)

  • Ren Li

    (King Abdullah University of Science and Technology)

  • Hossein Fariborzi

    (King Abdullah University of Science and Technology)

  • Juan B. Roldan

    (University of Granada)

  • Guenther Benstetter

    (Deggendorf Institute of Technology)

  • Xixiang Zhang

    (King Abdullah University of Science and Technology (KAUST))

  • Husam N. Alshareef

    (King Abdullah University of Science and Technology (KAUST))

  • Tibor Grasser

    (TU Wien)

  • Huaqiang Wu

    (Tsinghua University)

  • Daniele Ielmini

    (Politecnico of Milan)

  • Mario Lanza

    (King Abdullah University of Science and Technology (KAUST))

Abstract

Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductor industry1,2. However, most studies in this field have been limited to the fabrication and characterization of isolated large (more than 1 µm2) devices on unfunctional SiO2–Si substrates. Some studies have integrated monolayer graphene on silicon microchips as a large-area (more than 500 µm2) interconnection3 and as a channel of large transistors (roughly 16.5 µm2) (refs. 4,5), but in all cases the integration density was low, no computation was demonstrated and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here, we present the fabrication of high-integration-density 2D–CMOS hybrid microchips for memristive applications—CMOS stands for complementary metal–oxide–semiconductor. We transfer a sheet of multilayer hexagonal boron nitride onto the back-end-of-line interconnections of silicon microchips containing CMOS transistors of the 180 nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the hexagonal boron nitride memristors, which allows us to achieve endurances of roughly 5 million cycles in memristors as small as 0.053 µm2. We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity signals that are suitable for the implementation of spiking neural networks. The high performance and the relatively-high technology readiness level achieved represent a notable advance towards the integration of 2D materials in microelectronic products and memristive applications.

Suggested Citation

  • Kaichen Zhu & Sebastian Pazos & Fernando Aguirre & Yaqing Shen & Yue Yuan & Wenwen Zheng & Osamah Alharbi & Marco A. Villena & Bin Fang & Xinyi Li & Alessandro Milozzi & Matteo Farronato & Miguel Muño, 2023. "Hybrid 2D–CMOS microchips for memristive applications," Nature, Nature, vol. 618(7963), pages 57-62, June.
  • Handle: RePEc:nat:nature:v:618:y:2023:i:7963:d:10.1038_s41586-023-05973-1
    DOI: 10.1038/s41586-023-05973-1
    as

    Download full text from publisher

    File URL: https://www.nature.com/articles/s41586-023-05973-1
    File Function: Abstract
    Download Restriction: Access to the full text of the articles in this series is restricted.

    File URL: https://libkey.io/10.1038/s41586-023-05973-1?utm_source=ideas
    LibKey link: if access is restricted and if your library uses this service, LibKey will redirect you to where you can use your library subscription to access this item
    ---><---

    As the access to this document is restricted, you may want to search for a different version of it.

    Citations

    Citations are extracted by the CitEc Project, subscribe to its RSS feed for this item.
    as


    Cited by:

    1. Xue Chen & Mengfen Che & Weidong Xu & Zhongbin Wu & Yung Doug Suh & Suli Wu & Xiaowang Liu & Wei Huang, 2024. "Matrix-induced defects and molecular doping in the afterglow of SiO2 microparticles," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    2. Tao Guo & Shasha Li & Y. Norman Zhou & Wei D. Lu & Yong Yan & Yimin A. Wu, 2024. "Interspecies-chimera machine vision with polarimetry for real-time navigation and anti-glare pattern recognition," Nature Communications, Nature, vol. 15(1), pages 1-13, December.
    3. Yue Yuan & Jonas Weber & Junzhu Li & Bo Tian & Yinchang Ma & Xixiang Zhang & Takashi Taniguchi & Kenji Watanabe & Mario Lanza, 2024. "On the quality of commercial chemical vapour deposited hexagonal boron nitride," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    4. S. S. Teja Nibhanupudi & Anupam Roy & Dmitry Veksler & Matthew Coupin & Kevin C. Matthews & Matthew Disiena & Ansh & Jatin V. Singh & Ioana R. Gearba-Dolocan & Jamie Warner & Jaydeep P. Kulkarni & Gen, 2024. "Ultra-fast switching memristors based on two-dimensional materials," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

    More about this item

    Statistics

    Access and download statistics

    Corrections

    All material on this site has been provided by the respective publishers and authors. You can help correct errors and omissions. When requesting a correction, please mention this item's handle: RePEc:nat:nature:v:618:y:2023:i:7963:d:10.1038_s41586-023-05973-1. See general information about how to correct material in RePEc.

    If you have authored this item and are not yet registered with RePEc, we encourage you to do it here. This allows to link your profile to this item. It also allows you to accept potential citations to this item that we are uncertain about.

    We have no bibliographic references for this item. You can help adding them by using this form .

    If you know of missing items citing this one, you can help us creating those links by adding the relevant references in the same way as above, for each refering item. If you are a registered author of this item, you may also want to check the "citations" tab in your RePEc Author Service profile, as there may be some citations waiting for confirmation.

    For technical questions regarding this item, or to correct its authors, title, abstract, bibliographic or download information, contact: Sonal Shukla or Springer Nature Abstracting and Indexing (email available below). General contact details of provider: http://www.nature.com .

    Please note that corrections may take a couple of weeks to filter through the various RePEc services.

    IDEAS is a RePEc service. RePEc uses bibliographic data supplied by the respective publishers.