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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

Author

Listed:
  • Yuchao Yang

    (the University of Michigan)

  • Peng Gao

    (the University of Michigan
    Present address: Brookhaven National Laboratory, Upton, New York 11973, USA)

  • Linze Li

    (the University of Michigan)

  • Xiaoqing Pan

    (the University of Michigan)

  • Stefan Tappertzhofen

    (Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University)

  • ShinHyun Choi

    (the University of Michigan)

  • Rainer Waser

    (Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University
    Peter Grünberg Institute 7, Research Centre Jülich GmbH)

  • Ilia Valov

    (Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University
    Peter Grünberg Institute 7, Research Centre Jülich GmbH)

  • Wei D. Lu

    (the University of Michigan)

Abstract

Nanoscale metal inclusions in or on solid-state dielectrics are an integral part of modern electrocatalysis, optoelectronics, capacitors, metamaterials and memory devices. The properties of these composite systems strongly depend on the size, dispersion of the inclusions and their chemical stability, and are usually considered constant. Here we demonstrate that nanoscale inclusions (for example, clusters) in dielectrics dynamically change their shape, size and position upon applied electric field. Through systematic in situ transmission electron microscopy studies, we show that fundamental electrochemical processes can lead to universally observed nucleation and growth of metal clusters, even for inert metals like platinum. The clusters exhibit diverse dynamic behaviours governed by kinetic factors including ion mobility and redox rates, leading to different filament growth modes and structures in memristive devices. These findings reveal the microscopic origin behind resistive switching, and also provide general guidance for the design of novel devices involving electronics and ionics.

Suggested Citation

  • Yuchao Yang & Peng Gao & Linze Li & Xiaoqing Pan & Stefan Tappertzhofen & ShinHyun Choi & Rainer Waser & Ilia Valov & Wei D. Lu, 2014. "Electrochemical dynamics of nanoscale metallic inclusions in dielectrics," Nature Communications, Nature, vol. 5(1), pages 1-9, September.
  • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5232
    DOI: 10.1038/ncomms5232
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    Cited by:

    1. Chang Liu & Pek Jun Tiw & Teng Zhang & Yanghao Wang & Lei Cai & Rui Yuan & Zelun Pan & Wenshuo Yue & Yaoyu Tao & Yuchao Yang, 2024. "VO2 memristor-based frequency converter with in-situ synthesize and mix for wireless internet-of-things," Nature Communications, Nature, vol. 15(1), pages 1-11, December.
    2. Rui Yuan & Pek Jun Tiw & Lei Cai & Zhiyu Yang & Chang Liu & Teng Zhang & Chen Ge & Ru Huang & Yuchao Yang, 2023. "A neuromorphic physiological signal processing system based on VO2 memristor for next-generation human-machine interface," Nature Communications, Nature, vol. 14(1), pages 1-14, December.
    3. Liying Xu & Jiadi Zhu & Bing Chen & Zhen Yang & Keqin Liu & Bingjie Dang & Teng Zhang & Yuchao Yang & Ru Huang, 2022. "A distributed nanocluster based multi-agent evolutionary network," Nature Communications, Nature, vol. 13(1), pages 1-10, December.
    4. Konlechner, Roland & Allagui, Anis & Antonov, Vladimir N. & Yudin, Dmitry, 2023. "A superstatistics approach to the modelling of memristor current–voltage responses," Physica A: Statistical Mechanics and its Applications, Elsevier, vol. 614(C).
    5. Ying Zhang & Ge-Qi Mao & Xiaolong Zhao & Yu Li & Meiyun Zhang & Zuheng Wu & Wei Wu & Huajun Sun & Yizhong Guo & Lihua Wang & Xumeng Zhang & Qi Liu & Hangbing Lv & Kan-Hao Xue & Guangwei Xu & Xiangshui, 2021. "Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging," Nature Communications, Nature, vol. 12(1), pages 1-10, December.
    6. S. S. Teja Nibhanupudi & Anupam Roy & Dmitry Veksler & Matthew Coupin & Kevin C. Matthews & Matthew Disiena & Ansh & Jatin V. Singh & Ioana R. Gearba-Dolocan & Jamie Warner & Jaydeep P. Kulkarni & Gen, 2024. "Ultra-fast switching memristors based on two-dimensional materials," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    7. Rui Yuan & Qingxi Duan & Pek Jun Tiw & Ge Li & Zhuojian Xiao & Zhaokun Jing & Ke Yang & Chang Liu & Chen Ge & Ru Huang & Yuchao Yang, 2022. "A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system," Nature Communications, Nature, vol. 13(1), pages 1-12, December.
    8. Jaehyun Kang & Taeyoon Kim & Suman Hu & Jaewook Kim & Joon Young Kwak & Jongkil Park & Jong Keuk Park & Inho Kim & Suyoun Lee & Sangbum Kim & YeonJoo Jeong, 2022. "Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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