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Zero-static power radio-frequency switches based on MoS2 atomristors

Author

Listed:
  • Myungsoo Kim

    (The University of Texas at Austin)

  • Ruijing Ge

    (The University of Texas at Austin)

  • Xiaohan Wu

    (The University of Texas at Austin)

  • Xing Lan

    (NG Next, Northrop Grumman Corporation)

  • Jesse Tice

    (NG Next, Northrop Grumman Corporation)

  • Jack C. Lee

    (The University of Texas at Austin)

  • Deji Akinwande

    (The University of Texas at Austin)

Abstract

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10 THz for sub-μm2 switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Suggested Citation

  • Myungsoo Kim & Ruijing Ge & Xiaohan Wu & Xing Lan & Jesse Tice & Jack C. Lee & Deji Akinwande, 2018. "Zero-static power radio-frequency switches based on MoS2 atomristors," Nature Communications, Nature, vol. 9(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-04934-x
    DOI: 10.1038/s41467-018-04934-x
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    Cited by:

    1. Yue Niu & Lei Li & Zhiying Qi & Hein Htet Aung & Xinyi Han & Reshef Tenne & Yugui Yao & Alla Zak & Yao Guo, 2023. "0D van der Waals interfacial ferroelectricity," Nature Communications, Nature, vol. 14(1), pages 1-9, December.
    2. S. S. Teja Nibhanupudi & Anupam Roy & Dmitry Veksler & Matthew Coupin & Kevin C. Matthews & Matthew Disiena & Ansh & Jatin V. Singh & Ioana R. Gearba-Dolocan & Jamie Warner & Jaydeep P. Kulkarni & Gen, 2024. "Ultra-fast switching memristors based on two-dimensional materials," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
    3. Baoshan Tang & Hasita Veluri & Yida Li & Zhi Gen Yu & Moaz Waqar & Jin Feng Leong & Maheswari Sivan & Evgeny Zamburg & Yong-Wei Zhang & John Wang & Aaron V-Y. Thean, 2022. "Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    4. Chenhao Wang & Xinyi Xu & Xiaodong Pi & Mark D. Butala & Wen Huang & Lei Yin & Wenbing Peng & Munir Ali & Srikrishna Chanakya Bodepudi & Xvsheng Qiao & Yang Xu & Wei Sun & Deren Yang, 2022. "Neuromorphic device based on silicon nanosheets," Nature Communications, Nature, vol. 13(1), pages 1-10, December.

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