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Ferroelectric domain wall motion induced by polarized light

Author

Listed:
  • Fernando Rubio-Marcos

    (Instituto de Cerámica y Vidrio, CSIC)

  • Adolfo Del Campo

    (Instituto de Cerámica y Vidrio, CSIC)

  • Pascal Marchet

    (Laboratoire de Science des Procédés Céramiques et de Traitements de Surface, UMR 7315 CNRS, Université de Limoges, Centre Européen de la Céramique)

  • Jose F. Fernández

    (Instituto de Cerámica y Vidrio, CSIC)

Abstract

Ferroelectric materials exhibit spontaneous and stable polarization, which can usually be reoriented by an applied external electric field. The electrically switchable nature of this polarization is at the core of various ferroelectric devices. The motion of the associated domain walls provides the basis for ferroelectric memory, in which the storage of data bits is achieved by driving domain walls that separate regions with different polarization directions. Here we show the surprising ability to move ferroelectric domain walls of a BaTiO3 single crystal by varying the polarization angle of a coherent light source. This unexpected coupling between polarized light and ferroelectric polarization modifies the stress induced in the BaTiO3 at the domain wall, which is observed using in situ confocal Raman spectroscopy. This effect potentially leads to the non-contact remote control of ferroelectric domain walls by light.

Suggested Citation

  • Fernando Rubio-Marcos & Adolfo Del Campo & Pascal Marchet & Jose F. Fernández, 2015. "Ferroelectric domain wall motion induced by polarized light," Nature Communications, Nature, vol. 6(1), pages 1-9, May.
    • Handle: RePEc:nat:natcom:v:6:y:2015:i:1:d:10.1038_ncomms7594
    DOI: 10.1038/ncomms7594
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    Cited by:

    1. Fan Zhang & Zhe Wang & Lixuan Liu & Anmin Nie & Yanxing Li & Yongji Gong & Wenguang Zhu & Chenggang Tao, 2024. "Atomic-scale manipulation of polar domain boundaries in monolayer ferroelectric In2Se3," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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