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Modulation-doping a correlated electron insulator

Author

Listed:
  • Debasish Mondal

    (Indian Institute of Science)

  • Smruti Rekha Mahapatra

    (Indian Institute of Science)

  • Abigail M. Derrico

    (Temple University)

  • Rajeev Kumar Rai

    (Indian Institute of Science)

  • Jay R. Paudel

    (Temple University)

  • Christoph Schlueter

    (Deutsches Elektronen-Synchrotron)

  • Andrei Gloskovskii

    (Deutsches Elektronen-Synchrotron)

  • Rajdeep Banerjee

    (Indian Institute of Science)

  • Atsushi Hariki

    (Osaka Metropolitan University)

  • Frank M. F. DeGroot

    (Utrecht University, Inorganic Chemistry and Catalysis Group Universiteitsweg 99)

  • D. D. Sarma

    (Indian Institute of Science)

  • Awadhesh Narayan

    (Indian Institute of Science)

  • Pavan Nukala

    (Indian Institute of Science)

  • Alexander X. Gray

    (Temple University)

  • Naga Phani B. Aetukuri

    (Indian Institute of Science)

Abstract

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2—especially without inducing structural changes—has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard X-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5 × 1021 cm−3 without inducing any measurable structural changes. We find that the MIT temperature (TMIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e−/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

Suggested Citation

  • Debasish Mondal & Smruti Rekha Mahapatra & Abigail M. Derrico & Rajeev Kumar Rai & Jay R. Paudel & Christoph Schlueter & Andrei Gloskovskii & Rajdeep Banerjee & Atsushi Hariki & Frank M. F. DeGroot & , 2023. "Modulation-doping a correlated electron insulator," Nature Communications, Nature, vol. 14(1), pages 1-11, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-41816-3
    DOI: 10.1038/s41467-023-41816-3
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    References listed on IDEAS

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    1. Mengkun Liu & Harold Y. Hwang & Hu Tao & Andrew C. Strikwerda & Kebin Fan & George R. Keiser & Aaron J. Sternbach & Kevin G. West & Salinporn Kittiwatanakul & Jiwei Lu & Stuart A. Wolf & Fiorenzo G. O, 2012. "Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial," Nature, Nature, vol. 487(7407), pages 345-348, July.
    2. M. Nakano & K. Shibuya & D. Okuyama & T. Hatano & S. Ono & M. Kawasaki & Y. Iwasa & Y. Tokura, 2012. "Collective bulk carrier delocalization driven by electrostatic surface charge accumulation," Nature, Nature, vol. 487(7408), pages 459-462, July.
    3. Yunkyu Park & Hyeji Sim & Minguk Jo & Gi-Yeop Kim & Daseob Yoon & Hyeon Han & Younghak Kim & Kyung Song & Donghwa Lee & Si-Young Choi & Junwoo Son, 2020. "Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2," Nature Communications, Nature, vol. 11(1), pages 1-10, December.
    4. Takeaki Yajima & Tomonori Nishimura & Akira Toriumi, 2015. "Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics," Nature Communications, Nature, vol. 6(1), pages 1-9, December.
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    Cited by:

    1. Amirifard, Masoumeh & Sinton, Ronald A. & Kurtz, Sarah, 2024. "How demand-side management can shape electricity generation capacity planning," Utilities Policy, Elsevier, vol. 88(C).

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