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Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

Author

Listed:
  • R. Yukawa

    (High Energy Accelerator Research Organization (KEK))

  • M. Kobayashi

    (High Energy Accelerator Research Organization (KEK))

  • T. Kanda

    (Tohoku University)

  • D. Shiga

    (High Energy Accelerator Research Organization (KEK)
    Tohoku University)

  • K. Yoshimatsu

    (Tohoku University)

  • S. Ishibashi

    (National Institute of Advanced Industrial Science and Technology (AIST))

  • M. Minohara

    (High Energy Accelerator Research Organization (KEK))

  • M. Kitamura

    (High Energy Accelerator Research Organization (KEK))

  • K. Horiba

    (High Energy Accelerator Research Organization (KEK))

  • A. F. Santander-Syro

    (Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d’Orsay)

  • H. Kumigashira

    (High Energy Accelerator Research Organization (KEK)
    Tohoku University)

Abstract

The metal-insulator transition (MIT), a fascinating phenomenon occurring in some strongly correlated materials, is of central interest in modern condensed-matter physics. Controlling the MIT by external stimuli is a key technological goal for applications in future electronic devices. However, the standard control by means of the field effect, which works extremely well for semiconductor transistors, faces severe difficulties when applied to the MIT. Hence, a radically different approach is needed. Here, we report an MIT induced by resonant tunneling (RT) in double quantum well (QW) structures of strongly correlated oxides. In our structures, two layers of the strongly correlated conductive oxide SrVO3 (SVO) sandwich a barrier layer of the band insulator SrTiO3. The top QW is a marginal Mott-insulating SVO layer, while the bottom QW is a metallic SVO layer. Angle-resolved photoemission spectroscopy experiments reveal that the top QW layer becomes metallized when the thickness of the tunneling barrier layer is reduced. An analysis based on band structure calculations indicates that RT between the quantized states of the double QW induces the MIT. Our work opens avenues for realizing the Mott-transistor based on the wave-function engineering of strongly correlated electrons.

Suggested Citation

  • R. Yukawa & M. Kobayashi & T. Kanda & D. Shiga & K. Yoshimatsu & S. Ishibashi & M. Minohara & M. Kitamura & K. Horiba & A. F. Santander-Syro & H. Kumigashira, 2021. "Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide," Nature Communications, Nature, vol. 12(1), pages 1-7, December.
    • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27327-z
    DOI: 10.1038/s41467-021-27327-z
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    References listed on IDEAS

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    1. A. T. Bollinger & G. Dubuis & J. Yoon & D. Pavuna & J. Misewich & I. Božović, 2011. "Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance," Nature, Nature, vol. 472(7344), pages 458-460, April.
    2. Woo Seok Choi & Sang A. Lee & Jeong Ho You & Suyoun Lee & Ho Nyung Lee, 2015. "Resonant tunnelling in a quantum oxide superlattice," Nature Communications, Nature, vol. 6(1), pages 1-6, November.
    3. M. Nakano & K. Shibuya & D. Okuyama & T. Hatano & S. Ono & M. Kawasaki & Y. Iwasa & Y. Tokura, 2012. "Collective bulk carrier delocalization driven by electrostatic surface charge accumulation," Nature, Nature, vol. 487(7408), pages 459-462, July.
    4. Takeaki Yajima & Tomonori Nishimura & Akira Toriumi, 2015. "Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics," Nature Communications, Nature, vol. 6(1), pages 1-9, December.
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    Cited by:

    1. Wei Li & Wen Duan & Guocheng Liao & Fanfan Gao & Yusen Wang & Rongxia Cui & Jincai Zhao & Chuanyi Wang, 2024. "0.68% of solar-to-hydrogen efficiency and high photostability of organic-inorganic membrane catalyst," Nature Communications, Nature, vol. 15(1), pages 1-10, December.

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