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Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Author

Listed:
  • Jaeun Eom

    (Korea Institute of Science and Technology (KIST)
    Seoul National University)

  • In Hak Lee

    (Korea Institute of Science and Technology (KIST))

  • Jung Yun Kee

    (Korea Institute of Science and Technology (KIST)
    Soongsil University)

  • Minhyun Cho

    (Kyung Hee University)

  • Jeongdae Seo

    (KAIST)

  • Hoyoung Suh

    (Korea Institute of Science and Technology (KIST))

  • Hyung-Jin Choi

    (Korea Institute of Science and Technology (KIST))

  • Yumin Sim

    (Chung-Ang University)

  • Shuzhang Chen

    (Brookhaven National Laboratory
    Stony Brook University)

  • Hye Jung Chang

    (Korea Institute of Science and Technology (KIST))

  • Seung-Hyub Baek

    (Korea Institute of Science and Technology (KIST))

  • Cedomir Petrovic

    (Brookhaven National Laboratory
    Stony Brook University)

  • Hyejin Ryu

    (Korea Institute of Science and Technology (KIST))

  • Chaun Jang

    (Korea Institute of Science and Technology (KIST))

  • Young Duck Kim

    (Kyung Hee University)

  • Chan-Ho Yang

    (KAIST)

  • Maeng-Je Seong

    (Chung-Ang University)

  • Jin Hong Lee

    (Korea Institute of Science and Technology (KIST))

  • Se Young Park

    (Soongsil University
    Soongsil University)

  • Jun Woo Choi

    (Korea Institute of Science and Technology (KIST))

Abstract

We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-xGeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied to the Fe3-xGeTe2/In2Se3 heterostructure device modulate the magnetic properties of Fe3-xGeTe2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In2Se3 and Fe3-xGeTe2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe3-xGeTe2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

Suggested Citation

  • Jaeun Eom & In Hak Lee & Jung Yun Kee & Minhyun Cho & Jeongdae Seo & Hoyoung Suh & Hyung-Jin Choi & Yumin Sim & Shuzhang Chen & Hye Jung Chang & Seung-Hyub Baek & Cedomir Petrovic & Hyejin Ryu & Chaun, 2023. "Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-41382-8
    DOI: 10.1038/s41467-023-41382-8
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