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Multiferroicity in atomic van der Waals heterostructures

Author

Listed:
  • Cheng Gong

    (University of California)

  • Eun Mi Kim

    (Ulsan National Institute of Science and Technology)

  • Yuan Wang

    (University of California
    Lawrence Berkeley National Laboratory)

  • Geunsik Lee

    (Ulsan National Institute of Science and Technology)

  • Xiang Zhang

    (University of California
    Lawrence Berkeley National Laboratory)

Abstract

Materials that are simultaneously ferromagnetic and ferroelectric – multiferroics – promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d-orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients’ structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr2Ge2Te6 and ferroelectric In2Se3, thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In2Se3 reverses its polarization, the magnetism of Cr2Ge2Te6 is switched, and correspondingly In2Se3 becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

Suggested Citation

  • Cheng Gong & Eun Mi Kim & Yuan Wang & Geunsik Lee & Xiang Zhang, 2019. "Multiferroicity in atomic van der Waals heterostructures," Nature Communications, Nature, vol. 10(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:10:y:2019:i:1:d:10.1038_s41467-019-10693-0
    DOI: 10.1038/s41467-019-10693-0
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    Cited by:

    1. Jaeun Eom & In Hak Lee & Jung Yun Kee & Minhyun Cho & Jeongdae Seo & Hoyoung Suh & Hyung-Jin Choi & Yumin Sim & Shuzhang Chen & Hye Jung Chang & Seung-Hyub Baek & Cedomir Petrovic & Hyejin Ryu & Chaun, 2023. "Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
    2. Ruirui Niu & Zhuoxian Li & Xiangyan Han & Zhuangzhuang Qu & Dongdong Ding & Zhiyu Wang & Qianling Liu & Tianyao Liu & Chunrui Han & Kenji Watanabe & Takashi Taniguchi & Menghao Wu & Qi Ren & Xueyun Wa, 2022. "Giant ferroelectric polarization in a bilayer graphene heterostructure," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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