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Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2

Author

Listed:
  • Li Huang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xianghua Kong

    (Shenzhen University
    Renmin University of China
    McGill University)

  • Qi Zheng

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yuqing Xing

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Hui Chen

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Yan Li

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Zhixin Hu

    (Tianjin University)

  • Shiyu Zhu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jingsi Qiao

    (Renmin University of China
    Beijing Institute of Technology)

  • Yu-Yang Zhang

    (University of Chinese Academy of Sciences)

  • Haixia Cheng

    (Renmin University of China)

  • Zhihai Cheng

    (Renmin University of China)

  • Xianggang Qiu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Enke Liu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Hechang Lei

    (Renmin University of China)

  • Xiao Lin

    (University of Chinese Academy of Sciences)

  • Ziqiang Wang

    (Boston College)

  • Haitao Yang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Wei Ji

    (Renmin University of China
    Renmin University of China)

  • Hong-Jun Gao

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Hefei National Laboratory)

Abstract

Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.

Suggested Citation

  • Li Huang & Xianghua Kong & Qi Zheng & Yuqing Xing & Hui Chen & Yan Li & Zhixin Hu & Shiyu Zhu & Jingsi Qiao & Yu-Yang Zhang & Haixia Cheng & Zhihai Cheng & Xianggang Qiu & Enke Liu & Hechang Lei & Xia, 2023. "Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2," Nature Communications, Nature, vol. 14(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-40942-2
    DOI: 10.1038/s41467-023-40942-2
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