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Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface

Author

Listed:
  • Mengxi Wang

    (University of Science and Technology Beijing)

  • Jun Zhou

    (Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03)

  • Xiaoguang Xu

    (University of Science and Technology Beijing)

  • Tanzhao Zhang

    (University of Science and Technology Beijing)

  • Zhiqiang Zhu

    (University of Science and Technology Beijing)

  • Zhixian Guo

    (University of Science and Technology Beijing)

  • Yibo Deng

    (University of Science and Technology Beijing)

  • Ming Yang

    (The Hong Kong Polytechnic University)

  • Kangkang Meng

    (University of Science and Technology Beijing)

  • Bin He

    (Chinese Academy of Sciences)

  • Jialiang Li

    (Chinese Academy of Sciences)

  • Guoqiang Yu

    (Chinese Academy of Sciences)

  • Tao Zhu

    (Chinese Academy of Sciences)

  • Ang Li

    (Beijing University of Technology)

  • Xiaodong Han

    (Beijing University of Technology)

  • Yong Jiang

    (University of Science and Technology Beijing)

Abstract

Manipulating spin polarization orientation is challenging but crucial for field-free spintronic devices. Although such manipulation has been demonstrated in a limited number of antiferromagnetic metal-based systems, the inevitable shunting effects from the metallic layer can reduce the overall device efficiency. In this study, we propose an antiferromagnetic insulator-based heterostructure NiO/Ta/Pt/Co/Pt for such spin polarization control without any shunting effect in the antiferromagnetic layer. We show that zero-field magnetization switching can be realized and is related to the out-of-plane component of spin polarization modulated by the NiO/Pt interface. The zero-field magnetization switching ratio can be effectively tuned by the substrates, in which the easy axis of NiO can be manipulated by the tensile or compressive strain from the substrates. Our work demonstrates that the insulating antiferromagnet based heterostructure is a promising platform to enhance the spin-orbital torque efficiency and achieve field-free magnetization switching, thus opening an avenue towards energy-efficient spintronic devices.

Suggested Citation

  • Mengxi Wang & Jun Zhou & Xiaoguang Xu & Tanzhao Zhang & Zhiqiang Zhu & Zhixian Guo & Yibo Deng & Ming Yang & Kangkang Meng & Bin He & Jialiang Li & Guoqiang Yu & Tao Zhu & Ang Li & Xiaodong Han & Yong, 2023. "Field-free spin-orbit torque switching via out-of-plane spin-polarization induced by an antiferromagnetic insulator/heavy metal interface," Nature Communications, Nature, vol. 14(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-38550-1
    DOI: 10.1038/s41467-023-38550-1
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    References listed on IDEAS

    as
    1. Alisha M. Humphries & Tao Wang & Eric R. J. Edwards & Shane R. Allen & Justin M. Shaw & Hans T. Nembach & John Q. Xiao & T. J. Silva & Xin Fan, 2017. "Observation of spin-orbit effects with spin rotation symmetry," Nature Communications, Nature, vol. 8(1), pages 1-7, December.
    2. T. Nan & C. X. Quintela & J. Irwin & G. Gurung & D. F. Shao & J. Gibbons & N. Campbell & K. Song & S. -Y. Choi & L. Guo & R. D. Johnson & P. Manuel & R. V. Chopdekar & I. Hallsteinsen & T. Tybell & P., 2020. "Controlling spin current polarization through non-collinear antiferromagnetism," Nature Communications, Nature, vol. 11(1), pages 1-7, December.
    3. A. van den Brink & G. Vermijs & A. Solignac & J. Koo & J. T. Kohlhepp & H. J. M. Swagten & B. Koopmans, 2016. "Field-free magnetization reversal by spin-Hall effect and exchange bias," Nature Communications, Nature, vol. 7(1), pages 1-6, April.
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