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Room-temperature valley transistors for low-power neuromorphic computing

Author

Listed:
  • Jiewei Chen

    (The Hong Kong Polytechnic University
    The Hong Kong Polytechnic University Shenzhen Research Institute)

  • Yue Zhou

    (The Hong Kong Polytechnic University
    Huazhong University of Science and Technology)

  • Jianmin Yan

    (The Hong Kong Polytechnic University
    The Hong Kong Polytechnic University Shenzhen Research Institute)

  • Jidong Liu

    (Shenzhen University)

  • Lin Xu

    (The Hong Kong Polytechnic University
    The Hong Kong Polytechnic University Shenzhen Research Institute)

  • Jingli Wang

    (Fudan University)

  • Tianqing Wan

    (The Hong Kong Polytechnic University)

  • Yuhui He

    (Huazhong University of Science and Technology)

  • Wenjing Zhang

    (Shenzhen University)

  • Yang Chai

    (The Hong Kong Polytechnic University
    The Hong Kong Polytechnic University Shenzhen Research Institute)

Abstract

Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.

Suggested Citation

  • Jiewei Chen & Yue Zhou & Jianmin Yan & Jidong Liu & Lin Xu & Jingli Wang & Tianqing Wan & Yuhui He & Wenjing Zhang & Yang Chai, 2022. "Room-temperature valley transistors for low-power neuromorphic computing," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-35396-x
    DOI: 10.1038/s41467-022-35396-x
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    2. Lorenzo Rocchino & Federico Balduini & Heinz Schmid & Alan Molinari & Mathieu Luisier & Vicky Süß & Claudia Felser & Bernd Gotsmann & Cezar B. Zota, 2024. "Magnetoresistive-coupled transistor using the Weyl semimetal NbP," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    3. Shuai Chen & Zhongliang Zhou & Kunqi Hou & Xihu Wu & Qiang He & Cindy G. Tang & Ting Li & Xiujuan Zhang & Jiansheng Jie & Zhiyi Gao & Nripan Mathews & Wei Lin Leong, 2024. "Artificial organic afferent nerves enable closed-loop tactile feedback for intelligent robot," Nature Communications, Nature, vol. 15(1), pages 1-13, December.

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