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Magnetoresistive-coupled transistor using the Weyl semimetal NbP

Author

Listed:
  • Lorenzo Rocchino

    (IBM Research Europe—Zürich)

  • Federico Balduini

    (IBM Research Europe—Zürich)

  • Heinz Schmid

    (IBM Research Europe—Zürich)

  • Alan Molinari

    (IBM Research Europe—Zürich)

  • Mathieu Luisier

    (ETH Zurich)

  • Vicky Süß

    (Max Planck Institute for Chemical Physics of Solids)

  • Claudia Felser

    (Max Planck Institute for Chemical Physics of Solids)

  • Bernd Gotsmann

    (IBM Research Europe—Zürich)

  • Cezar B. Zota

    (IBM Research Europe—Zürich)

Abstract

Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properties of such devices—attenuation of the electric field, and limited mobility and charge carrier density in semiconductor channels. In this work, we demonstrate a new type of transistor that operates through a different mechanism. The channel material is a Weyl semimetal, NbP, whose resistivity is modulated via a magnetic field generated by an integrated superconductor. Due to the exceptionally large electron mobility of this material, which reaches over 1,000,000 cm2/Vs, and the strong magnetoresistive coupling, the transistor can generate significant transconductance amplification at nanowatt levels of power. This type of device can enable new low-power amplifiers, suitable for qubit readout operation in quantum computers.

Suggested Citation

  • Lorenzo Rocchino & Federico Balduini & Heinz Schmid & Alan Molinari & Mathieu Luisier & Vicky Süß & Claudia Felser & Bernd Gotsmann & Cezar B. Zota, 2024. "Magnetoresistive-coupled transistor using the Weyl semimetal NbP," Nature Communications, Nature, vol. 15(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-44961-5
    DOI: 10.1038/s41467-024-44961-5
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    1. Na Xin & James Lourembam & Piranavan Kumaravadivel & A. E. Kazantsev & Zefei Wu & Ciaran Mullan & Julien Barrier & Alexandra A. Geim & I. V. Grigorieva & A. Mishchenko & A. Principi & V. I. Fal’ko & L, 2023. "Giant magnetoresistance of Dirac plasma in high-mobility graphene," Nature, Nature, vol. 616(7956), pages 270-274, April.
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    3. Jiewei Chen & Yue Zhou & Jianmin Yan & Jidong Liu & Lin Xu & Jingli Wang & Tianqing Wan & Yuhui He & Wenjing Zhang & Yang Chai, 2022. "Room-temperature valley transistors for low-power neuromorphic computing," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
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