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Negative magnetoresistance in Dirac semimetal Cd3As2

Author

Listed:
  • Hui Li

    (The Hong Kong University of Science and Technology)

  • Hongtao He

    (South University of Science and Technology of China)

  • Hai-Zhou Lu

    (South University of Science and Technology of China)

  • Huachen Zhang

    (The Hong Kong University of Science and Technology)

  • Hongchao Liu

    (The Hong Kong University of Science and Technology)

  • Rong Ma

    (The Hong Kong University of Science and Technology)

  • Zhiyong Fan

    (The Hong Kong University of Science and Technology)

  • Shun-Qing Shen

    (The University of Hong Kong)

  • Jiannong Wang

    (The Hong Kong University of Science and Technology)

Abstract

A large negative magnetoresistance (NMR) is anticipated in topological semimetals in parallel magnetic fields, demonstrating the chiral anomaly, a long-sought high-energy-physics effect, in solid-state systems. Recent experiments reveal that the Dirac semimetal Cd3As2 has the record-high mobility and positive linear magnetoresistance in perpendicular magnetic fields. However, the NMR has not yet been unveiled. Here we report the observation of NMR in Cd3As2 microribbons in parallel magnetic fields up to 66% at 50 K and visible at room temperatures. The NMR is sensitive to the angle between magnetic and electrical fields, robust against temperature and dependent on the carrier density. The large NMR results from low carrier densities in our Cd3As2 samples, ranging from 3.0 × 1017 cm−3 at 300 K to 2.2 × 1016 cm−3 below 50 K. We therefore attribute the observed NMR to the chiral anomaly. In perpendicular magnetic fields, a positive linear magnetoresistance up to 1,670% at 14 T and 2 K is also observed.

Suggested Citation

  • Hui Li & Hongtao He & Hai-Zhou Lu & Huachen Zhang & Hongchao Liu & Rong Ma & Zhiyong Fan & Shun-Qing Shen & Jiannong Wang, 2016. "Negative magnetoresistance in Dirac semimetal Cd3As2," Nature Communications, Nature, vol. 7(1), pages 1-7, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10301
    DOI: 10.1038/ncomms10301
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    Cited by:

    1. Jiewei Chen & Yue Zhou & Jianmin Yan & Jidong Liu & Lin Xu & Jingli Wang & Tianqing Wan & Yuhui He & Wenjing Zhang & Yang Chai, 2022. "Room-temperature valley transistors for low-power neuromorphic computing," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    2. Tetsuya Nomoto & Shusaku Imajo & Hiroki Akutsu & Yasuhiro Nakazawa & Yoshimitsu Kohama, 2023. "Correlation-driven organic 3D topological insulator with relativistic fermions," Nature Communications, Nature, vol. 14(1), pages 1-7, December.

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