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High-throughput screening of 2D van der Waals crystals with plastic deformability

Author

Listed:
  • Zhiqiang Gao

    (Chinese Academy of Sciences
    ShanghaiTech University)

  • Tian-Ran Wei

    (Shanghai Jiao Tong University)

  • Tingting Deng

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Pengfei Qiu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Wei Xu

    (Xi’an Jiaotong University)

  • Yuecun Wang

    (Xi’an Jiaotong University)

  • Lidong Chen

    (Chinese Academy of Sciences
    ShanghaiTech University
    University of Chinese Academy of Sciences)

  • Xun Shi

    (Chinese Academy of Sciences
    Shanghai Jiao Tong University
    University of Chinese Academy of Sciences)

Abstract

Inorganic semiconductors exhibit multifarious physical properties, but they are prevailingly brittle, impeding their application in flexible and hetero-shaped electronics. The exceptional plasticity discovered in InSe crystal indicates the existence of abundant plastically deformable two-dimensional van der Waals (2D vdW) materials, but the conventional trial-and-error method is too time-consuming and costly. Here we report on the discovery of tens of potential 2D chalcogenide crystals with plastic deformability using a nearly automated and efficient high-throughput screening methodology. Seven candidates e.g., famous MoS2, GaSe, and SnSe2 2D materials are carefully verified to show largely anisotropic plastic deformations, which are contributed by both interlayer and cross-layer slips involving continuous breaking and reconstruction of chemical interactions. The plasticity becomes a new facet of 2D materials for deformable or flexible electronics.

Suggested Citation

  • Zhiqiang Gao & Tian-Ran Wei & Tingting Deng & Pengfei Qiu & Wei Xu & Yuecun Wang & Lidong Chen & Xun Shi, 2022. "High-throughput screening of 2D van der Waals crystals with plastic deformability," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-35229-x
    DOI: 10.1038/s41467-022-35229-x
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    References listed on IDEAS

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    1. Jin Young Oh & Simon Rondeau-Gagné & Yu-Cheng Chiu & Alex Chortos & Franziska Lissel & Ging-Ji Nathan Wang & Bob C. Schroeder & Tadanori Kurosawa & Jeffrey Lopez & Toru Katsumata & Jie Xu & Chenxin Zh, 2016. "Intrinsically stretchable and healable semiconducting polymer for organic transistors," Nature, Nature, vol. 539(7629), pages 411-415, November.
    2. M. G. Vergniory & L. Elcoro & Claudia Felser & Nicolas Regnault & B. Andrei Bernevig & Zhijun Wang, 2019. "A complete catalogue of high-quality topological materials," Nature, Nature, vol. 566(7745), pages 480-485, February.
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