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Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4

Author

Listed:
  • Wenxuan Zhao

    (Tsinghua University)

  • Ming Yang

    (Beihang University
    Beihang University)

  • Runzhe Xu

    (Tsinghua University)

  • Xian Du

    (Tsinghua University)

  • Yidian Li

    (Tsinghua University)

  • Kaiyi Zhai

    (Tsinghua University)

  • Cheng Peng

    (University of Oxford)

  • Ding Pei

    (University of Oxford)

  • Han Gao

    (ShanghaiTech University and CAS-Shanghai Science Research Center)

  • Yiwei Li

    (ShanghaiTech University and CAS-Shanghai Science Research Center)

  • Lixuan Xu

    (Tsinghua University)

  • Junfeng Han

    (Beijing Institute of Technology
    Yangtze Delta Region Academy of Beijing Institute of Technology)

  • Yuan Huang

    (Beijing Institute of Technology
    Yangtze Delta Region Academy of Beijing Institute of Technology)

  • Zhongkai Liu

    (ShanghaiTech University and CAS-Shanghai Science Research Center
    ShanghaiTech Laboratory for Topological Physics)

  • Yugui Yao

    (Beijing Institute of Technology
    Yangtze Delta Region Academy of Beijing Institute of Technology)

  • Jincheng Zhuang

    (Beihang University
    Beihang University)

  • Yi Du

    (Beihang University
    Beihang University)

  • Jinjian Zhou

    (Beijing Institute of Technology)

  • Yulin Chen

    (University of Oxford
    ShanghaiTech University and CAS-Shanghai Science Research Center
    ShanghaiTech Laboratory for Topological Physics)

  • Lexian Yang

    (Tsinghua University
    Frontier Science Center for Quantum Information
    Collaborative Innovation Center of Quantum Matter)

Abstract

The notion of topological insulators (TIs), characterized by an insulating bulk and conducting topological surface states, can be extended to higher-order topological insulators (HOTIs) hosting gapless modes localized at the boundaries of two or more dimensions lower than the insulating bulk. In this work, by performing high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements with submicron spatial and spin resolution, we systematically investigate the electronic structure and spin texture of quasi-one-dimensional (1D) HOTI candidate Bi4Br4. In contrast to the bulk-state-dominant spectra on the (001) surface, we observe gapped surface states on the (100) surface, whose dispersion and spin-polarization agree well with our ab-initio calculations. Moreover, we reveal in-gap states connecting the surface valence and conduction bands, which is a signature of the hinge states inside the (100) surface gap. Our findings provide compelling evidence for the HOTI phase of Bi4Br4. The identification of the higher-order topological phase promises applications based on 1D spin-momentum locked current in electronic and spintronic devices.

Suggested Citation

  • Wenxuan Zhao & Ming Yang & Runzhe Xu & Xian Du & Yidian Li & Kaiyi Zhai & Cheng Peng & Ding Pei & Han Gao & Yiwei Li & Lixuan Xu & Junfeng Han & Yuan Huang & Zhongkai Liu & Yugui Yao & Jincheng Zhuang, 2023. "Topological electronic structure and spin texture of quasi-one-dimensional higher-order topological insulator Bi4Br4," Nature Communications, Nature, vol. 14(1), pages 1-7, December.
  • Handle: RePEc:nat:natcom:v:14:y:2023:i:1:d:10.1038_s41467-023-43882-z
    DOI: 10.1038/s41467-023-43882-z
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    References listed on IDEAS

    as
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