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Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors

Author

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  • Juhyeok Lee

    (Pohang University of Science and Technology (POSTECH))

  • Syed Zahid Hassan

    (Pohang University of Science and Technology (POSTECH))

  • Sangjun Lee

    (Pohang University of Science and Technology (POSTECH))

  • Hye Ryun Sim

    (Pohang University of Science and Technology (POSTECH))

  • Dae Sung Chung

    (Pohang University of Science and Technology (POSTECH))

Abstract

We propose a highly efficient crosslinking strategy for organic–inorganic hybrid dielectric layers using azide-functionalized acetylacetonate, which covalently connect inorganic particles to polymers, enabling highly efficient inter- and intra-crosslinking of organic and inorganic inclusions, resulting in a dense and defect-free thin-film morphology. From the optimized processing conditions, we obtained an excellent dielectric strength of over 4.0 MV cm−1, a high dielectric constant of ~14, and a low surface energy of 38 mN m−1. We demonstrated the fabrication of exceptionally high-performance, hysteresis-free n-type solution-processed oxide transistors comprising an In2O3/ZnO double layer as an active channel with an electron mobility of over 50 cm2 V−1 s−1, on/off ratio of ~107, subthreshold swing of 108 mV dec−1, and high bias-stress stability. From temperature-dependent I–V analyses combined with charge transport mechanism analyses, we demonstrated that the proposed hybrid dielectric layer provides percolation-limited charge transport for the In2O3/ZnO double layer under field-effect conditions.

Suggested Citation

  • Juhyeok Lee & Syed Zahid Hassan & Sangjun Lee & Hye Ryun Sim & Dae Sung Chung, 2022. "Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34772-x
    DOI: 10.1038/s41467-022-34772-x
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    References listed on IDEAS

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    1. Min Je Kim & Myeongjae Lee & Honggi Min & Seunghan Kim & Jeehye Yang & Hyukmin Kweon & Wooseop Lee & Do Hwan Kim & Jong-Ho Choi & Du Yeol Ryu & Moon Sung Kang & BongSoo Kim & Jeong Ho Cho, 2020. "Universal three-dimensional crosslinker for all-photopatterned electronics," Nature Communications, Nature, vol. 11(1), pages 1-11, December.
    2. Mengzhou Liao & Zheng Wei & Luojun Du & Qinqin Wang & Jian Tang & Hua Yu & Fanfan Wu & Jiaojiao Zhao & Xiaozhi Xu & Bo Han & Kaihui Liu & Peng Gao & Tomas Polcar & Zhipei Sun & Dongxia Shi & Rong Yang, 2020. "Precise control of the interlayer twist angle in large scale MoS2 homostructures," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    3. Xiao Xue & Bishnu Patra & Jeroen P. G. Dijk & Nodar Samkharadze & Sushil Subramanian & Andrea Corna & Brian Paquelet Wuetz & Charles Jeon & Farhana Sheikh & Esdras Juarez-Hernandez & Brando Perez Espa, 2021. "CMOS-based cryogenic control of silicon quantum circuits," Nature, Nature, vol. 593(7858), pages 205-210, May.
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