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Precise control of the interlayer twist angle in large scale MoS2 homostructures

Author

Listed:
  • Mengzhou Liao

    (Chinese Academy of Sciences
    Czech Technical University in Prague, Technicka 2)

  • Zheng Wei

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Luojun Du

    (Aalto University, Tietotie 3)

  • Qinqin Wang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jian Tang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Hua Yu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Fanfan Wu

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Jiaojiao Zhao

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Xiaozhi Xu

    (Peking University)

  • Bo Han

    (Peking University)

  • Kaihui Liu

    (Peking University)

  • Peng Gao

    (Peking University)

  • Tomas Polcar

    (Czech Technical University in Prague, Technicka 2)

  • Zhipei Sun

    (Aalto University, Tietotie 3
    Aalto University)

  • Dongxia Shi

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences)

  • Rong Yang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

  • Guangyu Zhang

    (Chinese Academy of Sciences
    University of Chinese Academy of Sciences
    Songshan Lake Materials Laboratory)

Abstract

Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Suggested Citation

  • Mengzhou Liao & Zheng Wei & Luojun Du & Qinqin Wang & Jian Tang & Hua Yu & Fanfan Wu & Jiaojiao Zhao & Xiaozhi Xu & Bo Han & Kaihui Liu & Peng Gao & Tomas Polcar & Zhipei Sun & Dongxia Shi & Rong Yang, 2020. "Precise control of the interlayer twist angle in large scale MoS2 homostructures," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:11:y:2020:i:1:d:10.1038_s41467-020-16056-4
    DOI: 10.1038/s41467-020-16056-4
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    Cited by:

    1. Manzhang Xu & Hongjia Ji & Lu Zheng & Weiwei Li & Jing Wang & Hanxin Wang & Lei Luo & Qianbo Lu & Xuetao Gan & Zheng Liu & Xuewen Wang & Wei Huang, 2024. "Reconfiguring nucleation for CVD growth of twisted bilayer MoS2 with a wide range of twist angles," Nature Communications, Nature, vol. 15(1), pages 1-12, December.
    2. Juhyeok Lee & Syed Zahid Hassan & Sangjun Lee & Hye Ryun Sim & Dae Sung Chung, 2022. "Azide-functionalized ligand enabling organic–inorganic hybrid dielectric for high-performance solution-processed oxide transistors," Nature Communications, Nature, vol. 13(1), pages 1-11, December.
    3. Ammar Armghan & Meshari Alsharari & Khaled Aliqab & Osamah Alsalman & Juveriya Parmar & Shobhit K. Patel, 2023. "Graphene Twistronics: Tuning the Absorption Spectrum and Achieving Metamaterial Properties," Mathematics, MDPI, vol. 11(7), pages 1-17, March.
    4. Lu Li & Qinqin Wang & Fanfan Wu & Qiaoling Xu & Jinpeng Tian & Zhiheng Huang & Qinghe Wang & Xuan Zhao & Qinghua Zhang & Qinkai Fan & Xiuzhen Li & Yalin Peng & Yangkun Zhang & Kunshan Ji & Aomiao Zhi , 2024. "Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control," Nature Communications, Nature, vol. 15(1), pages 1-9, December.

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