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Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Author

Listed:
  • Alexandre Heintz

    (Université de Sherbrooke
    Université de Sherbrooke)

  • Bouraoui Ilahi

    (Université de Sherbrooke
    Université de Sherbrooke)

  • Alexandre Pofelski

    (McMaster University)

  • Gianluigi Botton

    (McMaster University
    Canadian Light Source)

  • Gilles Patriarche

    (Centre de Nanosciences et de Nanotechnologies – C2N, CNRS, Univ. Paris-Sud, Université Paris-Saclay)

  • Andrea Barzaghi

    (L-NESS and Dipartimento di Fisica, Politecnico di Milano)

  • Simon Fafard

    (Université de Sherbrooke
    Université de Sherbrooke)

  • Richard Arès

    (Université de Sherbrooke
    Université de Sherbrooke)

  • Giovanni Isella

    (L-NESS and Dipartimento di Fisica, Politecnico di Milano)

  • Abderraouf Boucherif

    (Université de Sherbrooke
    Université de Sherbrooke)

Abstract

A perfectly compliant substrate would allow the monolithic integration of high-quality semiconductor materials such as Ge and III-V on Silicon (Si) substrate, enabling novel functionalities on the well-established low-cost Si technology platform. Here, we demonstrate a compliant Si substrate allowing defect-free epitaxial growth of lattice mismatched materials. The method is based on the deep patterning of the Si substrate to form micrometer-scale pillars and subsequent electrochemical porosification. The investigation of the epitaxial Ge crystalline quality by X-ray diffraction, transmission electron microscopy and etch-pits counting demonstrates the full elastic relaxation of defect-free microcrystals. The achievement of dislocation free heteroepitaxy relies on the interplay between elastic deformation of the porous micropillars, set under stress by the lattice mismatch between Ge and Si, and on the diffusion of Ge into the mesoporous patterned substrate attenuating the mismatch strain at the Ge/Si interface.

Suggested Citation

  • Alexandre Heintz & Bouraoui Ilahi & Alexandre Pofelski & Gianluigi Botton & Gilles Patriarche & Andrea Barzaghi & Simon Fafard & Richard Arès & Giovanni Isella & Abderraouf Boucherif, 2022. "Defect free strain relaxation of microcrystals on mesoporous patterned silicon," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-34288-4
    DOI: 10.1038/s41467-022-34288-4
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    References listed on IDEAS

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    1. Yunjo Kim & Samuel S. Cruz & Kyusang Lee & Babatunde O. Alawode & Chanyeol Choi & Yi Song & Jared M. Johnson & Christopher Heidelberger & Wei Kong & Shinhyun Choi & Kuan Qiao & Ibraheem Almansouri & E, 2017. "Remote epitaxy through graphene enables two-dimensional material-based layer transfer," Nature, Nature, vol. 544(7650), pages 340-343, April.
    2. Daryl T. Spencer & Tara Drake & Travis C. Briles & Jordan Stone & Laura C. Sinclair & Connor Fredrick & Qing Li & Daron Westly & B. Robert Ilic & Aaron Bluestone & Nicolas Volet & Tin Komljenovic & Li, 2018. "An optical-frequency synthesizer using integrated photonics," Nature, Nature, vol. 557(7703), pages 81-85, May.
    3. Youcef A. Bioud & Abderraouf Boucherif & Maksym Myronov & Ali Soltani & Gilles Patriarche & Nadi Braidy & Mourad Jellite & Dominique Drouin & Richard Arès, 2019. "Uprooting defects to enable high-performance III–V optoelectronic devices on silicon," Nature Communications, Nature, vol. 10(1), pages 1-12, December.
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    Cited by:

    1. Lin-Ding Yuan & Shu-Shen Li & Jun-Wei Luo, 2024. "Direct bandgap emission from strain-doped germanium," Nature Communications, Nature, vol. 15(1), pages 1-7, December.

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