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High-performance lasers for fully integrated silicon nitride photonics

Author

Listed:
  • Chao Xiang

    (University of California, Santa Barbara)

  • Joel Guo

    (University of California, Santa Barbara)

  • Warren Jin

    (University of California, Santa Barbara)

  • Lue Wu

    (California Institute of Technology)

  • Jonathan Peters

    (University of California, Santa Barbara)

  • Weiqiang Xie

    (University of California, Santa Barbara)

  • Lin Chang

    (University of California, Santa Barbara)

  • Boqiang Shen

    (California Institute of Technology)

  • Heming Wang

    (California Institute of Technology)

  • Qi-Fan Yang

    (California Institute of Technology)

  • David Kinghorn

    (University of California, Santa Barbara
    Pro Precision Process and Reliability LLC)

  • Mario Paniccia

    (Anello Photonics)

  • Kerry J. Vahala

    (California Institute of Technology)

  • Paul A. Morton

    (Morton Photonics)

  • John E. Bowers

    (University of California, Santa Barbara)

Abstract

Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However, a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, non-optimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output power through the SiN waveguide and sub-kHz fundamental linewidth, addressing all the aforementioned issues. We also show Hertz-level fundamental linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-Q SiN resonators, mark a milestone towards a fully integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.

Suggested Citation

  • Chao Xiang & Joel Guo & Warren Jin & Lue Wu & Jonathan Peters & Weiqiang Xie & Lin Chang & Boqiang Shen & Heming Wang & Qi-Fan Yang & David Kinghorn & Mario Paniccia & Kerry J. Vahala & Paul A. Morton, 2021. "High-performance lasers for fully integrated silicon nitride photonics," Nature Communications, Nature, vol. 12(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-26804-9
    DOI: 10.1038/s41467-021-26804-9
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