Author
Listed:
- Yalin Peng
(Chinese Academy of Sciences
China North Vehicle Research Institute)
- Chenyang Cui
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Lu Li
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Yuchen Wang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Qinqin Wang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Jinpeng Tian
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Zhiheng Huang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Biying Huang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Yangkun Zhang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Xiuzhen Li
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Jian Tang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Yanbang Chu
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Wei Yang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Dongxia Shi
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Luojun Du
(Chinese Academy of Sciences
University of Chinese Academy of Sciences)
- Na Li
(Chinese Academy of Sciences
University of Chinese Academy of Sciences
Songshan Lake Materials Laboratory)
- Guangyu Zhang
(Chinese Academy of Sciences
University of Chinese Academy of Sciences
Songshan Lake Materials Laboratory)
Abstract
Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS2). By co-optimization of the fabrication processes, flexible MoS2 TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS2 TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics.
Suggested Citation
Yalin Peng & Chenyang Cui & Lu Li & Yuchen Wang & Qinqin Wang & Jinpeng Tian & Zhiheng Huang & Biying Huang & Yangkun Zhang & Xiuzhen Li & Jian Tang & Yanbang Chu & Wei Yang & Dongxia Shi & Luojun Du , 2024.
"Medium-scale flexible integrated circuits based on 2D semiconductors,"
Nature Communications, Nature, vol. 15(1), pages 1-8, December.
Handle:
RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-55142-9
DOI: 10.1038/s41467-024-55142-9
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