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An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Author

Listed:
  • You Meng

    (City University of Hong Kong
    City University of Hong Kong)

  • Weijun Wang

    (City University of Hong Kong)

  • Rong Fan

    (City University of Hong Kong
    City University of Hong Kong)

  • Zhengxun Lai

    (City University of Hong Kong)

  • Wei Wang

    (City University of Hong Kong)

  • Dengji Li

    (City University of Hong Kong)

  • Xiaocui Li

    (City University of Hong Kong)

  • Quan Quan

    (City University of Hong Kong)

  • Pengshan Xie

    (City University of Hong Kong)

  • Dong Chen

    (City University of Hong Kong)

  • He Shao

    (City University of Hong Kong)

  • Bowen Li

    (City University of Hong Kong)

  • Zenghui Wu

    (City University of Hong Kong)

  • Zhe Yang

    (City University of Hong Kong)

  • SenPo Yip

    (Kyushu University)

  • Chun-Yuen Wong

    (City University of Hong Kong)

  • Yang Lu

    (City University of Hong Kong
    The University of Hong Kong)

  • Johnny C. Ho

    (City University of Hong Kong
    City University of Hong Kong
    Kyushu University)

Abstract

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Suggested Citation

  • You Meng & Weijun Wang & Rong Fan & Zhengxun Lai & Wei Wang & Dengji Li & Xiaocui Li & Quan Quan & Pengshan Xie & Dong Chen & He Shao & Bowen Li & Zenghui Wu & Zhe Yang & SenPo Yip & Chun-Yuen Wong & , 2024. "An inorganic-blended p-type semiconductor with robust electrical and mechanical properties," Nature Communications, Nature, vol. 15(1), pages 1-10, December.
  • Handle: RePEc:nat:natcom:v:15:y:2024:i:1:d:10.1038_s41467-024-48628-z
    DOI: 10.1038/s41467-024-48628-z
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    References listed on IDEAS

    as
    1. Ao Liu & Huihui Zhu & Won-Tae Park & Se-Jun Kim & Hyungjun Kim & Myung-Gil Kim & Yong-Young Noh, 2020. "High-performance p-channel transistors with transparent Zn doped-CuI," Nature Communications, Nature, vol. 11(1), pages 1-8, December.
    2. You Meng & Xiaocui Li & Xiaolin Kang & Wanpeng Li & Wei Wang & Zhengxun Lai & Weijun Wang & Quan Quan & Xiuming Bu & SenPo Yip & Pengshan Xie & Dong Chen & Dengji Li & Fei Wang & Chi-Fung Yeung & Chan, 2023. "Van der Waals nanomesh electronics on arbitrary surfaces," Nature Communications, Nature, vol. 14(1), pages 1-14, December.
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