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Ferroelectric domain-wall logic units

Author

Listed:
  • Jing Wang

    (Beijing Institute of Technology
    Tsinghua University)

  • Jing Ma

    (Tsinghua University)

  • Houbing Huang

    (Beijing Institute of Technology)

  • Ji Ma

    (Tsinghua University
    Kunming University of Science and Technology)

  • Hasnain Mehdi Jafri

    (Beijing Institute of Technology)

  • Yuanyuan Fan

    (Beijing Institute of Technology)

  • Huayu Yang

    (Beijing Institute of Technology)

  • Yue Wang

    (Tsinghua University)

  • Mingfeng Chen

    (Tsinghua University)

  • Di Liu

    (Beijing Institute of Technology)

  • Jinxing Zhang

    (Beijing Normal University)

  • Yuan-Hua Lin

    (Tsinghua University)

  • Long-Qing Chen

    (Pennsylvania State University)

  • Di Yi

    (Tsinghua University)

  • Ce-Wen Nan

    (Tsinghua University)

Abstract

The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work might provide a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.

Suggested Citation

  • Jing Wang & Jing Ma & Houbing Huang & Ji Ma & Hasnain Mehdi Jafri & Yuanyuan Fan & Huayu Yang & Yue Wang & Mingfeng Chen & Di Liu & Jinxing Zhang & Yuan-Hua Lin & Long-Qing Chen & Di Yi & Ce-Wen Nan, 2022. "Ferroelectric domain-wall logic units," Nature Communications, Nature, vol. 13(1), pages 1-8, December.
  • Handle: RePEc:nat:natcom:v:13:y:2022:i:1:d:10.1038_s41467-022-30983-4
    DOI: 10.1038/s41467-022-30983-4
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    References listed on IDEAS

    as
    1. J.R. Whyte & J.M. Gregg, 2015. "A diode for ferroelectric domain-wall motion," Nature Communications, Nature, vol. 6(1), pages 1-5, November.
    2. Zhaochu Luo & Aleš Hrabec & Trong Phuong Dao & Giacomo Sala & Simone Finizio & Junxiao Feng & Sina Mayr & Jörg Raabe & Pietro Gambardella & Laura J. Heyderman, 2020. "Current-driven magnetic domain-wall logic," Nature, Nature, vol. 579(7798), pages 214-218, March.
    3. Ying-Hui Hsieh & Fei Xue & Tiannan Yang & Heng-Jui Liu & Yuanmin Zhu & Yi-Chun Chen & Qian Zhan & Chun-Gang Duan & Long-Qing Chen & Qing He & Ying-Hao Chu, 2016. "Permanent ferroelectric retention of BiFeO3 mesocrystal," Nature Communications, Nature, vol. 7(1), pages 1-9, December.
    4. Chuanshou Wang & Xiaoxing Ke & Jianjun Wang & Renrong Liang & Zhenlin Luo & Yu Tian & Di Yi & Qintong Zhang & Jing Wang & Xiu-Feng Han & Gustaaf Van Tendeloo & Long-Qing Chen & Ce-Wen Nan & Ramamoorth, 2016. "Ferroelastic switching in a layered-perovskite thin film," Nature Communications, Nature, vol. 7(1), pages 1-9, April.
    5. R. K. Vasudevan & Y. Matsumoto & Xuan Cheng & A. Imai & S. Maruyama & H. L. Xin & M. B. Okatan & S. Jesse & S. V. Kalinin & V. Nagarajan, 2014. "Deterministic arbitrary switching of polarization in a ferroelectric thin film," Nature Communications, Nature, vol. 5(1), pages 1-8, December.
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