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Ferroelastic switching in a layered-perovskite thin film

Author

Listed:
  • Chuanshou Wang

    (Beijing Normal University)

  • Xiaoxing Ke

    (EMAT (Electron Microscopy for Materials Science), University of Antwerp
    Institute of Microstructures and Properties of Advanced Materials, Beijing University of Technology)

  • Jianjun Wang

    (State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University)

  • Renrong Liang

    (Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University)

  • Zhenlin Luo

    (National Synchrotron Radiation Laboratory and CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China)

  • Yu Tian

    (Beijing Normal University)

  • Di Yi

    (University of California)

  • Qintong Zhang

    (Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science)

  • Jing Wang

    (Beijing Normal University)

  • Xiu-Feng Han

    (Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Science)

  • Gustaaf Van Tendeloo

    (EMAT (Electron Microscopy for Materials Science), University of Antwerp)

  • Long-Qing Chen

    (State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University
    The Pennsylvania State University, University Park)

  • Ce-Wen Nan

    (State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University)

  • Ramamoorthy Ramesh

    (University of California)

  • Jinxing Zhang

    (Beijing Normal University)

Abstract

A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layered-perovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.

Suggested Citation

  • Chuanshou Wang & Xiaoxing Ke & Jianjun Wang & Renrong Liang & Zhenlin Luo & Yu Tian & Di Yi & Qintong Zhang & Jing Wang & Xiu-Feng Han & Gustaaf Van Tendeloo & Long-Qing Chen & Ce-Wen Nan & Ramamoorth, 2016. "Ferroelastic switching in a layered-perovskite thin film," Nature Communications, Nature, vol. 7(1), pages 1-9, April.
    • Handle: RePEc:nat:natcom:v:7:y:2016:i:1:d:10.1038_ncomms10636
    DOI: 10.1038/ncomms10636
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    Cited by:

    1. Jing Wang & Jing Ma & Houbing Huang & Ji Ma & Hasnain Mehdi Jafri & Yuanyuan Fan & Huayu Yang & Yue Wang & Mingfeng Chen & Di Liu & Jinxing Zhang & Yuan-Hua Lin & Long-Qing Chen & Di Yi & Ce-Wen Nan, 2022. "Ferroelectric domain-wall logic units," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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