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Deterministic arbitrary switching of polarization in a ferroelectric thin film

Author

Listed:
  • R. K. Vasudevan

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • Y. Matsumoto

    (School of Engineering, Tohoku University
    Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku)

  • Xuan Cheng

    (School of Materials Science and Engineering, University of New South Wales)

  • A. Imai

    (Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku
    School of Materials Science and Engineering, University of New South Wales)

  • S. Maruyama

    (School of Engineering, Tohoku University)

  • H. L. Xin

    (Center for Functional Nanomaterials, Brookhaven National Laboratory)

  • M. B. Okatan

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • S. Jesse

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • S. V. Kalinin

    (Center for Nanophase Materials Sciences, Oak Ridge National Laboratory)

  • V. Nagarajan

    (School of Materials Science and Engineering, University of New South Wales)

Abstract

Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for polarization rotation is an abundance of sub-50 nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

Suggested Citation

  • R. K. Vasudevan & Y. Matsumoto & Xuan Cheng & A. Imai & S. Maruyama & H. L. Xin & M. B. Okatan & S. Jesse & S. V. Kalinin & V. Nagarajan, 2014. "Deterministic arbitrary switching of polarization in a ferroelectric thin film," Nature Communications, Nature, vol. 5(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:5:y:2014:i:1:d:10.1038_ncomms5971
    DOI: 10.1038/ncomms5971
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    Cited by:

    1. Jing Wang & Jing Ma & Houbing Huang & Ji Ma & Hasnain Mehdi Jafri & Yuanyuan Fan & Huayu Yang & Yue Wang & Mingfeng Chen & Di Liu & Jinxing Zhang & Yuan-Hua Lin & Long-Qing Chen & Di Yi & Ce-Wen Nan, 2022. "Ferroelectric domain-wall logic units," Nature Communications, Nature, vol. 13(1), pages 1-8, December.

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