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Electroresistance in multipolar antiferroelectric Cu2Se semiconductor

Author

Listed:
  • Hui Bai

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Jinsong Wu

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Xianli Su

    (Wuhan University of Technology)

  • Haoyang Peng

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Zhi Li

    (Wuhan University of Technology)

  • Dongwang Yang

    (Wuhan University of Technology)

  • Qingjie Zhang

    (Wuhan University of Technology)

  • Ctirad Uher

    (University of Michigan)

  • Xinfeng Tang

    (Wuhan University of Technology)

Abstract

Electric field-induced changes in the electrical resistance of a material are considered essential and enabling processes for future efficient large-scale computations. However, the underlying physical mechanisms of electroresistance are currently remain largely unknown. Herein, an electrically reversible resistance change has been observed in the thermoelectric α-Cu2Se. The spontaneous electric dipoles formed by Cu+ ions displaced from their positions at the centers of Se-tetrahedrons in the ordered α-Cu2Se phase are examined, and α-Cu2Se phase is identified to be a multipolar antiferroelectric semiconductor. When exposed to the applied voltage, a reversible switching of crystalline domains aligned parallel to the polar axis results in an observed reversible resistance change. The study expands on opportunities for semiconductors with localized polar symmetry as the hardware basis for future computational architectures.

Suggested Citation

  • Hui Bai & Jinsong Wu & Xianli Su & Haoyang Peng & Zhi Li & Dongwang Yang & Qingjie Zhang & Ctirad Uher & Xinfeng Tang, 2021. "Electroresistance in multipolar antiferroelectric Cu2Se semiconductor," Nature Communications, Nature, vol. 12(1), pages 1-6, December.
  • Handle: RePEc:nat:natcom:v:12:y:2021:i:1:d:10.1038_s41467-021-27531-x
    DOI: 10.1038/s41467-021-27531-x
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    References listed on IDEAS

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    1. V. Garcia & S. Fusil & K. Bouzehouane & S. Enouz-Vedrenne & N. D. Mathur & A. Barthélémy & M. Bibes, 2009. "Giant tunnel electroresistance for non-destructive readout of ferroelectric states," Nature, Nature, vol. 460(7251), pages 81-84, July.
    2. Dmitri B. Strukov & Gregory S. Snider & Duncan R. Stewart & R. Stanley Williams, 2008. "The missing memristor found," Nature, Nature, vol. 453(7191), pages 80-83, May.
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