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Current induced electromechanical strain in thin antipolar Ag2Se semiconductor

Author

Listed:
  • Hao Luo

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Qi Liang

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Anan Guo

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Yimeng Yu

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Haoyang Peng

    (Wuhan University of Technology
    Wuhan University of Technology)

  • Xiaoyi Gao

    (Wuhan University of Technology)

  • Yihao Hu

    (Westlake University)

  • Xianli Su

    (Wuhan University of Technology)

  • Ctirad Uher

    (University of Michigan)

  • Yu Zheng

    (Wuhan University of Technology)

  • Dongwang Yang

    (Wuhan University of Technology)

  • Xiaolin Wang

    (University of Wollongong)

  • Qingjie Zhang

    (Wuhan University of Technology)

  • Xinfeng Tang

    (Wuhan University of Technology)

  • Shi Liu

    (Westlake University)

  • Gustaaf Tendeloo

    (Wuhan University of Technology
    University of Antwerp)

  • Shujun Zhang

    (University of Wollongong)

  • Jinsong Wu

    (Wuhan University of Technology
    Wuhan University of Technology)

Abstract

Electromechanical coupling permits energy conversion between electrical and elastic forms, with wide applications1,2. This conversion is usually observed in dielectric materials as piezoelectricity and electrostriction3–7. Electromechanical coupling response has also been observed in semiconductors8, however, the mechanism in semiconductors with a small bandgap remains contentious. Here we present a breakthrough discovery of a giant electromechanical strain triggered by the electric current in thin antipolar Ag2Se semiconductor. This phenomenon is made possible by the alteration of dipoles at a low current density (step I), followed by a phase transition under a moderate current density (step II), leading to a local strain of 6.7% measured by in-situ transmission electron microscopy. Our finding demonstrates that electric current has both thermal and athermal effect (e.g. alteration of dipoles and interaction of dipole vortices with the electric current). This strain allows for the concurrent control of electroelastic deformation and electric conductivity.

Suggested Citation

  • Hao Luo & Qi Liang & Anan Guo & Yimeng Yu & Haoyang Peng & Xiaoyi Gao & Yihao Hu & Xianli Su & Ctirad Uher & Yu Zheng & Dongwang Yang & Xiaolin Wang & Qingjie Zhang & Xinfeng Tang & Shi Liu & Gustaaf , 2025. "Current induced electromechanical strain in thin antipolar Ag2Se semiconductor," Nature Communications, Nature, vol. 16(1), pages 1-8, December.
    • Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-57057-5
    DOI: 10.1038/s41467-025-57057-5
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    References listed on IDEAS

    as
    1. Ming-Min Yang & Zheng-Dong Luo & Zhou Mi & Jinjin Zhao & Sharel Pei E & Marin Alexe, 2020. "Piezoelectric and pyroelectric effects induced by interface polar symmetry," Nature, Nature, vol. 584(7821), pages 377-381, August.
    2. Yongke Yan & Liwei D. Geng & Hairui Liu & Haoyang Leng & Xiaotian Li & Yu U. Wang & Shashank Priya, 2022. "Near-ideal electromechanical coupling in textured piezoelectric ceramics," Nature Communications, Nature, vol. 13(1), pages 1-9, December.
    3. Hui Bai & Jinsong Wu & Xianli Su & Haoyang Peng & Zhi Li & Dongwang Yang & Qingjie Zhang & Ctirad Uher & Xinfeng Tang, 2021. "Electroresistance in multipolar antiferroelectric Cu2Se semiconductor," Nature Communications, Nature, vol. 12(1), pages 1-6, December.
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